Physical modeling of IGBT turn on behavior

Kang, Xiaosong; Wang, X.; Lu, L.; Santi, Enrico; Hudgins, J.L.; Palmer, P.R.

doi:10.1109/ias.2003.1257659

Cited by 13 publications

(13 citation statements)

References 13 publications

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“…The subsystem TSRH uses (7) and (15) to calculate the Fourier series coefficients R n . The DnI subsystem implements (20), (21), (22) and (23) to calculate the terms on the left side of (11), (12) and (13). The An+k subsystem obtains the second terms on the right side of (11), (12) and (13), while An-k subsystem obtains the third terms on the right side of (12) and (13).…”

Section: Model Realization In Simulinkmentioning

confidence: 99%

“…Finally, the relatively high doping concentration in the FS layer is not considered in the buffer layer modeling. For the turn-on modeling, the models proposed in [22], [23] assume the high-level injection condition in the N-base at turn-on transient. Since the lowlevel injection in the N-base is not included, these models may be incapable to accurately model the conductivity modulation process during turn-on process.…”

Section: Introductionmentioning

confidence: 99%

“…on characterizing the IGBT turn-off transient while the works [22], [23] are presented for IGBT turn-on modeling. In [19], [20], the PT IGBT model proposed in [6] is directly used to characterize the inductive turn-off behavior of field stop (FS) IGBT and light punch-through (LPT) carrier stored trench bipolar transistor (CSTBT).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT

Xue

Zhang

2017

IEEE Trans. Power Electron.

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In this study, a physics-based compact model for high speed buffer layer insulated gate bipolar transistor (IGBT) is proposed. The model utilizes the 1-D Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. Based on the improved understanding on the inductive switching behavior of high speed buffer layer IGBT, the ADE is solved for all injection levels instead of high-level injection only as usually done. Assuming high-level injection condition in the buffer layer, the excess carrier transport, redistribution and recombination in the buffer layer are redescribed. Moreover, some physical characteristics such as the low conductivity of N-base at turn-on transient and free holes appeared in the depletion layer during turn-off process are also considered in the model. Finally, The double-pulse switching tests for a commercial field stop (FS) IGBT and a light punch-through (LPT) carrier stored trench bipolar transistor (CSTBT) are used to validate the proposed model. The simulation results are compared with experiment results and good agreement is obtained.Index Terms-insulated gate bipolar transistor (IGBT), power semiconductor modeling, field stop (FS) IGBT, light punchthrough (LPT) carrier stored trench bipolar transistor (CSTBT), physics-based IGBT model.

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Section: Model Realization In Simulinkmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT

Xue

Zhang

2017

IEEE Trans. Power Electron.

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“…The device-level model can provide the designers with accurate, detailed knowledge of IGBT devices, but it requires very long simulation time, and it is numerically prohibitive if one would like to study complex circuits containing multiple power devices requiring many switching events [13]. The physics-based model [13][14][15][16][17][18][19][20][21][22][23][24][25][26] is placed between these two extremes. The model is full physically based model of the power devices dedicated to circuit simulation [13].…”

Section: Introductionmentioning

confidence: 99%

Physics‐based model of LPT CSTBT including MOS‐side two‐dimensional effects

Xue

2016

IET Power Electronics

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In this study, a physics-based model for light punch through (LPT) carrier stored trench bipolar transistor (CSTBT) is developed. The model is based on the Fourier series solution of ambipolar diffusion equation implemented in MATLAB and Simulink. In the model, the MOS-side two-dimensional (2D) effects resulting from trench gate and carrier storage layer are studied analytically. Assuming high-level injection in LPT buffer layer, the model also describes the carrier transport, redistribution and recombination in the buffer layer in details. The static and transient experiments for a commercial CSTBT are used to validate the presented model. The simulation results are compared with experiment results and good agreement is obtained.

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“…In Hefner's model, calculation of redistribution current assumes a linear carrier distribution over n -region which causes some problems at describing switching behavior at high blocking voltages [4]. In Fourier solution, series truncation can give rise to oscillations in carrier concentration which can affect voltage drop estimation [5,6].…”

Section: Introductionmentioning

confidence: 99%

Modeling Buffer Layer IGBTs with an Efficient Parameter Extraction Method

Chibante¹,

Araújo²,

Carvalho³

IEEE 36th Conference on Power Electronics Specialists, 2005.

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A Finite Element physics-based punch-throughIGBT model is presented, as well as its porting into standard circuit simulator SPICE. Developed model is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs, from which charge carrier distribution is obtained. Implementing the model in a circuit simulator is made by means of an electrical analogy with the resulting system of ODEs. Other parts of the devices are modeled using conventional methods. The paper also discusses a parameter extraction procedure using an optimisation algorithm in order to get an efficient extraction of large number of parameters needed for physics-based IGBT models. Model is validated comparing experimental and simulated results

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Physical modeling of IGBT turn on behavior

Cited by 13 publications

References 13 publications

Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT

Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT

Physics‐based model of LPT CSTBT including MOS‐side two‐dimensional effects

Modeling Buffer Layer IGBTs with an Efficient Parameter Extraction Method

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