Modeling Buffer Layer IGBTs with an Efficient Parameter Extraction Method

Abstract

A Finite Element physics-based punch-throughIGBT model is presented, as well as its porting into standard circuit simulator SPICE. Developed model is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs, from which charge carrier distribution is obtained. Implementing the model in a circuit simulator is made by means of an electrical analogy with the resulting system of ODEs. Other parts of the devices are modeled using conventional methods. The paper also discusses a parameter extraction procedure using an optimisation algorithm in order to get an efficient extraction of large number of parameters needed for physics-based IGBT models. Model is validated comparing experimental and simulated results

TESE — A tool for teaching semiconductor theory

“…With ADE formulation described in Section II several semiconductor models have been developed: PIN diodes and BJTs [4], [5], [6] and IGBTs [7], [8], [9]. The models are used by the educational tool to perform the required simulations.…”

“…The basis of those models was developed by Araújo [3] based on the Ambipolar Diffusion Equation (ADE) solution through a variational formulation and simplex finite elements. This approach has already been shown to be successful for PIN diodes and BJTs [4], [5], [6] and IGBTs [7], [8], [9]. One important advantage of this modeling approach is its easy implementation into general circuit simulators by means of an electrical analogy with the resulting system of ordinary differential equations (ODEs).…”

A physics-based power diode model optimized through experiment based parameter extraction

“…This approach has already been successfully applied to IGBTs [3,4] and is now applied to p-i-n diodes.…”

“…This paper describes a parameter extraction procedure using an optimization process with experimental basis. This approach has already been successfully applied to IGBTs [3,4].…”

Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT

“…Review the previous literature on compact IGBT modeling [5]- [23], most of the works focus on modeling the NPT IGBT [8]- [18] or PT IGBT [5]- [7]. The high speed buffer layer IGBT, so far, has received relatively scare attention and only a few compact models are available to date [19]- [23].…”