Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part I: Device Model

Mission Profile-Based Reliability Design and Real-Time Life Consumption Estimation in Power Electronics

“…Models that can provide an accurate representation of the internal dynamic thermal behavior of power modules are useful when combined with damage based models to provide life consumption estimation of power modules in use. There are many approaches used to analyze the thermal behavior of power modules, for example; the three-dimensional finite element method (3-D FEM) [59]. Although 3-D FEM simulation delivers good results, it is unfeasible when used with real-time arbitrary load profiles.…”

Compact Electrothermal Reliability Modeling and Experimental Characterization of Bipolar Latchup in SiC and CoolMOS Power MOSFETs

“…There have been several publications that have detailed how the minority carrier distribution profile in the drift region can be modelled using the Fourier series solution to the ambipolar diffusion equation (ADE) [9,[13][14][15][16][17][18][19][20][21][22][23][24]. The reverse recovery characteristics of the PiN body diode in this paper have been modelled using the same techniques developed for discrete PiN diodes.…”

Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of <italic>dI <inline-formula><tex-math notation="LaTeX">$_{\bf DS}$</tex-math></inline-formula>/dt</italic> and Temperature

“…The models that have previously been developed to understand the transient behavior of silicon PiN diodes during reverse recovery, including physics-based models [21], [22], analytical models [23]- [25], Saber Models [26] and PSPICE Models [27] are not extendable to SiC Schottky diodes since the latter is unipolar [28]. Models for parameter extraction in SiC Schottky diodes [29] provide valuable information about understanding the static behavior of the diodes, however, they lack the capability of modeling dynamic characteristics and switching energy.…”