Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of &lt;italic&gt;dI &lt;inline-formula&gt;&lt;tex-math notation="LaTeX"&gt;$_{\bf DS}$&lt;/tex-math&gt;&lt;/inline-formula&gt;/dt&lt;/italic&gt; and Temperature

Jahdi, Saeed; Alatise, Olayiwola; Li, Ran; Mawby, P.A.

doi:10.1109/tpel.2014.2333474

Cited by 15 publications

(1 citation statement)

References 35 publications

(33 reference statements)

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“…In contrast, SiC SBDs are majority carrier devices (unipolar) that do not use minority carriers for electrical conduction, so in principle, minority carrier accumulation does not occur. In [17], SiC-SBD shows various merits such as reduction in the recovery losses, generates lower noises to the passive components and operating at higher frequencies.…”

Section: Sic-based Mosfet/schottky Barrier Diode (Sbd) Advancesmentioning

confidence: 99%

Recent advances and trend of HEV/EV‐oriented power semiconductors – an overview

Liu¹,

Wang

et al. 2020

IET Power Electronics

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This study introduces the development advances and trend of power semiconductors used in hybrid and electric vehicles (HEV/EV). The status and forecast of power electronics' requirement in HEV/EV are discussed along with a review of the automotive standard of power semiconductor devices. The advances in automotive semiconductor technologies such as Sibased insulated-gate bipolar transistor (IGBT) and freewheeling diode (FRD) and SiC-based metal oxide semiconductor fieldeffect transistor (MOSFET) and Schottky barrier diode are presented. The advances in automotive semiconductor packaging technologies are illustrated from three considerations, which are the low inductance in high-power density packaging, lower thermal resistance designing, and advanced packaging technologies. The challenges and development trend of more reliable power semiconductors for HEV/EV are discussed. The challenges in Si devices are focused on power density, efficiency, reliability, and packages, while the high temperature and low inductances are the main challenges for SiC devices. Lastly, the development trend is discussed in terms of four aspects, the new generation Si IGBT for HEV/EV, such as recessed-emittertrench, reverse-conduction-IGBT, and smart IGBT; next generation SiC MOSFET; new packaging technology and material, such as planar packaging.

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Section: Sic-based Mosfet/schottky Barrier Diode (Sbd) Advancesmentioning

confidence: 99%

Recent advances and trend of HEV/EV‐oriented power semiconductors – an overview

Liu¹,

Wang

et al. 2020

IET Power Electronics

View full text Add to dashboard Cite

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SiC SBDs selection method based on loss analysis of boost converter

Sato¹,

Umegami

Yamamoto

2016

IEEJ Transactions Elec Engng

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Silicon carbide schottky barrier diodes (SiC SBDs) have much better characteristic than Si PiN diode in high voltage applications because SiC SBDs do not have recovery effect. However, simple replacing is not the most effective way. In a boost converter, the power loss caused by the SiC SBD can be divided into the conduction loss of the SiC SBD and the loss caused by the energy stored in the junction capacitance of the SiC SBD. Therefore analysis of not only the conduction loss but also the loss caused by the energy stored in the junction capacitance of the SiC SBD can realize the SiC SBD selection to improve the efficiency of the boost converter.

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Correction method for calculating junction temperature considering parasitic effects in SiC MOSFETs

Liu

Yin

et al. 2022

J. Power Electron.

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Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of <italic>dI <inline-formula><tex-math notation="LaTeX">$_{\bf DS}$</tex-math></inline-formula>/dt</italic> and Temperature

Cited by 15 publications

References 35 publications

Recent advances and trend of HEV/EV‐oriented power semiconductors – an overview

Recent advances and trend of HEV/EV‐oriented power semiconductors – an overview

SiC SBDs selection method based on loss analysis of boost converter

Correction method for calculating junction temperature considering parasitic effects in SiC MOSFETs

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