Recent advances and trend of HEV/EV‐oriented power semiconductors – an overview

Abstract

This study introduces the development advances and trend of power semiconductors used in hybrid and electric vehicles (HEV/EV). The status and forecast of power electronics' requirement in HEV/EV are discussed along with a review of the automotive standard of power semiconductor devices. The advances in automotive semiconductor technologies such as Sibased insulated-gate bipolar transistor (IGBT) and freewheeling diode (FRD) and SiC-based metal oxide semiconductor fieldeffect transistor (MOSFET) and Schottky barrier diode are presented. The advances in automotive semiconductor packaging technologies are illustrated from three considerations, which are the low inductance in high-power density packaging, lower thermal resistance designing, and advanced packaging technologies. The challenges and development trend of more reliable power semiconductors for HEV/EV are discussed. The challenges in Si devices are focused on power density, efficiency, reliability, and packages, while the high temperature and low inductances are the main challenges for SiC devices. Lastly, the development trend is discussed in terms of four aspects, the new generation Si IGBT for HEV/EV, such as recessed-emittertrench, reverse-conduction-IGBT, and smart IGBT; next generation SiC MOSFET; new packaging technology and material, such as planar packaging.

The role of power device technology in the electric vehicle powertrain

“…Figure 9 also indicates the modules that are classified as "automotive grade" † † † (rounded technologies) or that are otherwise recommended by the manufacturer for use (C) Mitsubishi Electric IGBT modules [129][130][131][132][133][134].…”

Design and Implementation of Reduced Grid Impact Charging Station for Public Transportation Applications

“…As the number of levels increases, the number of power devices in the converter also increases, which is not at all advantageous from the reliability point of view. However, in the last few years, power semiconductors have become more and more reliable [31,32] and their cost has drastically reduced compared to the cost of copper and iron, which are the main elements for making inductors or transformers. The other disadvantage of having a large number of devices could lie in the control circuits to ensure the best input and output characteristics.…”

Fault Detection Method Using a Convolution Neural Network for Hybrid Active Neutral-Point Clamped Inverters

“…This result is attained by incorporating a SiC transistor in the HANPC inverter. SiC is one of the prominent wide bandgap (WBG) materials that enable operation at a higher voltage and temperature with increased efficiency [26]- [27]. However, the application of SiC devices to each switch is uneconomical because of the high price of WBG devices [5].…”