Photonic Integration With Epitaxial III–V on Silicon

Liu, Alan Y.; Bowers, John E.

doi:10.1109/jstqe.2018.2854542

Cited by 119 publications

(65 citation statements)

References 54 publications

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“…Despite the great efforts that have been devoted on heterogeneous integration of PC lasers on Si [25][26][27] , the monolithic integration is the most promising approach for a higher yield, higher density and scalability for III-V PC lasers integrated on Si platforms, which will further increase density and yield of fabricated laser compared with III-V ridge-waveguide lasers and bonded III-V PC lasers on Si [28][29][30] . Moreover, the monolithic integration is an ideal solution to reduce the substrate cost by growing III-V materials on large-scale Si wafers, instead of using dedicated and expensive GaAs and InP wafers [31][32][33][34] .…”

mentioning

confidence: 99%

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Zhou¹,

Tang²,

Xiang³

et al. 2020

Nat Commun

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Semiconductor III-V photonic crystal (PC) laser is regarded as a promising ultra-compact light source with unique advantages of ultralow energy consumption and small footprint for the next generation of Si-based on-chip optical interconnects. However, the significant material dissimilarities between III-V materials and Si are the fundamental roadblock for conventional monolithic III-V-on-silicon integration technology. Here, we demonstrate ultrasmall III-V PC membrane lasers monolithically grown on CMOS-compatible on-axis Si (001) substrates by using III-V quantum dots. The optically pumped InAs/GaAs quantumdot PC lasers exhibit single-mode operation with an ultra-low threshold of~0.6 μW and a large spontaneous emission coupling efficiency up to 18% under continuous-wave condition at room temperature. This work establishes a new route to form the basis of future monolithic light sources for high-density optical interconnects in future large-scale silicon electronic and photonic integrated circuits.

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mentioning

confidence: 99%

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Zhou¹,

Tang²,

Xiang³

et al. 2020

Nat Commun

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“…As a result, Ge-on-Si has become a well-developed platform for photonic integrated circuits [43]. Today, many foundries offer complete suites of technologies based on this platform, including the American Institute for manufacturing Integrated Photonics (AIM Photonics), IMEC, GlobalFoundries, Institute of Microelectronics (IME), STMicroelectronics, Taiwan Semiconductor Manufacturing Company (TSMC), and TowerJazz [44].…”

Section: Ge-on-si Photodiode Arraysmentioning

confidence: 99%

High-Speed Photodetectors for Microwave Photonics

Sun

Beling

2019

Applied Sciences

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“…A detailed techno-economic analysis of the benefits of epitaxial integration is the subject of Ref. 19.…”

Section: Introductionmentioning

confidence: 99%

“…Relative to Si, non-nitride III-V materials have larger lattice constants and higher coefficients of thermal expansion (see Table II) which, for unoptimized growth conditions, result in high densities (∼10 9 cm 2 ) of crystalline defects including primarily threading dislocations (TDs) and antiphase domains. Fortunately, through careful optimization of growth conditions and utilization of dislocation filtering layers and techniques, [19][20][21][22] the defect density can be reduced by a few orders of magnitude enabling near native substrate level performance.…”

Section: Introductionmentioning

confidence: 99%

Perspective: The future of quantum dot photonic integrated circuits

et al. 2018

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Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS) foundries.

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Photonic Integration With Epitaxial III–V on Silicon

Cited by 119 publications

References 54 publications

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

High-Speed Photodetectors for Microwave Photonics

Perspective: The future of quantum dot photonic integrated circuits

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