Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Wavelength-scale lasers provide promising applications through low power consumption requiring for optical cavities with increased quality factors. Cavity radiative losses can be suppressed strongly in the regime of optical bound states in the continuum; however, a finite size of the resonator limits the performance of bound states in the continuum as cavity modes for active nanophotonic devices. Here, we employ the concept of a supercavity mode created by merging symmetry-protected and accidental bound states in the continuum in the momentum space, and realize an efficient laser based on a finite-size cavity with a small footprint. We trace the evolution of lasing properties before and after the merging point by varying the lattice spacing, and we reveal this laser demonstrates the significantly reduced threshold, substantially increased quality factor, and shrunken far-field images. Our results provide a route for nanolasers with reduced out-of-plane losses in finite-size active nanodevices and improved lasing characteristics.

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“…13). The measured decay time of <138 ps in lasing is fast enough for the high-speed modulation 37,38 .…”

Section: Resultsmentioning

confidence: 84%

Ultralow-threshold laser using super-bound states in the continuum

et al. 2021

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“…As a promising ultra-compact on-chip light source, III-V photonic crystal lasers on Si benefits on their ultralow power consumption and small footprint. Most recently, Zhou et al demonstrated an optically pumped InAs QD photonic crystal laser on on-axis GaAs/Si (001) substrate, which was the first monolithic integration of photonic crystal laser emitting at 1.3 μm on CMOS-compatible Si (001) substrate [108]. A single mode operation with ultra-low threshold down to $0.6 μm and a large coupling efficiency for room temperature spontaneous emission under continuouswave condition were achieved.…”

Section: Continuous-wave Qd Photonic Crystal Lasers On On-axis Si (001)mentioning

confidence: 99%

“…(c) Collected light-light curve and linewidth of the lasing peak at 1306 nm, inset: Lorentzian fitting of data below the threshold. (d) Logarithmic light-light plot of fitted and collected data.Reproduce from Ref [108]…”

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confidence: 99%

GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications

Martin¹,

Baron²,

Bogumulowicz³

et al. 2021

Post-Transition Metals

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III-V semiconductors present interesting properties and are already used in electronics, lightening and photonic devices. Integration of III-V devices onto a Si CMOS platform is already in production using III-V devices transfer. A promising way consists in using hetero-epitaxy processes to grow the III-V materials directly on Si and at the right place. To reach this objective, some challenges still needed to be overcome. In this contribution, we will show how to overcome the different challenges associated to the heteroepitaxy and integration of III-As onto a silicon platform. We present solutions to get rid of antiphase domains for GaAs grown on exact Si(100). To reduce the threading dislocations density, efficient ways based on either insertion of InGaAs/GaAs multilayers defect filter layers or selective epitaxy in cavities are implemented. All these solutions allows fabricating electrically pumped laser structures based on InAs quantum dots active region, required for photonic and sensing applications.

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“…In addition, in recent years, significant progress is being made in integrating QDs lasers on CMOS-compatible Si and SOI substrates, either by direct growth or wafer bonding [34] techniques. These attempts have shown some very promising results, such as high-temperature CW operation up to 120 • C, [35] and, more recently, compact photonic crystal designs [36]. These results are very promising, but it should be noted that the high-temperature performance of these Si-based III-V lasers should still be further significantly enhanced at the needed high-temperature regime (>75 • C) if they are to be implemented in future DC architectures, and this is currently being intensively investigated in various settings.…”

Section: Light Sourcesmentioning

confidence: 99%

Co-Package Technology Platform for Low-Power and Low-Cost Data Centers

Papatryfonos

Selviah

Maman³

et al. 2021

Applied Sciences

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We report recent advances in photonic–electronic integration developed in the European research project L3MATRIX. The aim of the project was to demonstrate the basic building blocks of a co-packaged optical system. Two-dimensional silicon photonics arrays with 64 modulators were fabricated. Novel modulation schemes based on slow light modulation were developed to assist in achieving an efficient performance of the module. Integration of DFB laser sources within each cell in the matrix was demonstrated as well using wafer bonding between the InP and SOI wafers. Improved semiconductor quantum dot MBE growth, characterization and gain stack designs were developed. Packaging of these 2D photonic arrays in a chiplet configuration was demonstrated using a vertical integration approach in which the optical interconnect matrix was flip-chip assembled on top of a CMOS mimic chip with 2D vertical fiber coupling. The optical chiplet was further assembled on a substrate to facilitate integration with the multi-chip module of the co-packaged system with a switch surrounded by several such optical chiplets. We summarize the features of the L3MATRIX co-package technology platform and its holistic toolbox of technologies to address the next generation of computing challenges.

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Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Cited by 74 publications

References 59 publications

Ultralow-threshold laser using super-bound states in the continuum

Ultralow-threshold laser using super-bound states in the continuum

GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications

Co-Package Technology Platform for Low-Power and Low-Cost Data Centers

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