Photoluminescence studies of HgCdTe epilayers

Abstract

Photoluminescence spectra on Hg1‐xCdxTe (x∼0.3) layers grown by molecular beam epitaxy on CdZnTe substrates were studied. The investigations were carried out on non intentionally doped, In doped and As doped samples and the effect of different annealing procedures were investigated. Excitation‐power dependent and temperature dependent comparative studies were performed. The transition mechanisms are discussed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Photoluminescence in Mercury Cadmium Telluride – a Historical Retrospective. Part II: 2004–2022

“…The PL spectra of the sample doped with arsenic discussed in Refs. [14,15] had been described by Robin et al in Ref. [13] (see above).…”

“…Robin et al concluded in Refs. [14,15] that the studies on the indiumdoped sample showed that VF annealing both activated impurities and reduced alloy non-uniformity.…”

“…These ideas were further developed in conference papers [14,15], where in addition to arsenic-doped films, undoped and indium-doped samples were studied. The PL spectrum of the undoped sample with x = 0.32 contained one peak at 266 meV; after VF annealing, a second peak appeared at low temperatures at 260 meV.…”

Acceptor states in HgCdTe films grown by molecular‐beam epitaxy on GaAs and Si substrates

“…After the growth, the films were subjected to various types of postgrowth thermal annealings (TA). Such practice has proven to provide detailed information on defects and their behav-ior during post-growth processing of MCT both in relation to PL [8] and carrier lifetime [9] data. The conditions of the annealings are given in Table 1.…”