We studied the photoluminescence of Hg 1Àx Cd x Te (x % 0.3) layers grown by molecular-beam epitaxy on CdZnTe. The investigations were carried out on unintentionally doped, In-doped, and As-doped samples, and the effect of different annealing procedures was examined. Excitation-power-dependent and temperature-dependent comparative studies were performed. The transition mechanisms are discussed, and optical signatures for arsenic site transfer are found. The contributions due to As 2 Te 3 , As in an amphoteric site, Hg vacancies, and AsHg complexes were identified, and their ionization energies measured. The results are consistent with results found by other techniques. Thus, it is shown that photoluminescence applied to Hg 1Àx Cd x Te can resolve characteristics corresponding to native and intentional donors/ acceptors, and offers a nondestructive, fast tool for material characterization.

Arsenic incorporation in HgCdTe epilayers has been achieved with a nonconventional radio frequency plasma source during molecular beam epitaxial growth. Photoluminescence studies were carried out on HgCdTe arsenic-doped samples. Measurements were done on the as-grown sample, after a Hg vacancy filling annealing and after a 400 °C activation annealing under Hg pressure. A comparison with extended x-ray absorption fine structure results allows us to assign the observed optical transitions to the Hg vacancies, As2Te3 glass and AsHg dopants. An optical signature of the arsenic site transfer upon activation annealing is found.

Photoluminescence spectra on Hg1‐xCdxTe (x∼0.3) layers grown by molecular beam epitaxy on CdZnTe substrates were studied. The investigations were carried out on non intentionally doped, In doped and As doped samples and the effect of different annealing procedures were investigated. Excitation‐power dependent and temperature dependent comparative studies were performed. The transition mechanisms are discussed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)