Photoluminescence Properties of ZnO Thin Films Grown by Electrochemical Deposition

Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition

“…The enlargement of the ultraviolet band bottom at the lower energies is due to Urbach tail [10,26]. In annealing process, crystal quality of the ZnO films is improved because Zn(OH) 2 in the ZnO film is removed [27] and oxygen vacancies were combined with oxygen diffusing into the ZnO film. The crystal quality improvement leads to the increase of ultraviolet emission and the decrease of emission from defects.…”

“…Because Zn(OH) 2 is a wider E g material than ZnO, the E g of the as-prepared ZnO film is expected to be a higher value as Zn(OH) 2 coexisting with ZnO in the film [26]. After Zn(OH) 2 is removed from the film through the annealing process, the E g of the ZnO film decreases to the classical value [27].…”

Optical properties of high-quality ZnO thin films grown by a sputtering method

“…At the lowest excitation power of 0.7 mJ/ cm 2 , the energy spacing between the P band and the free exciton is $60 meV, which is almost equal to the exciton binding energy [3]. Thus, we conclude that the P band originates from inelastic scattering of two n ¼ 1 excitons, the so-called P emission [9][10][11]. The energy of the P emission, _o P ; is given by [9] …”

Photoluminescence properties of high-quality ZnO thin films prepared by an RF-magnetron sputtering method

“…At the lowest excitation power of 0.7 mJ/cm 2 , the energy spacing between the P band and the free exciton is $60 meV, which is almost equal to the exciton binding energy [7]. Thus, we conclude that the P band originates from inelastic scattering of two excitons with the quantum number of 1 (n ¼ 1), the so-called P emission [8][9][10]. The energy of the P emission, _o P , is given by [8] _o…”