Photoluminescence properties of high-quality ZnO thin films prepared by an RF-magnetron sputtering method

Kim, D.; Shimomura, T.; Wakaiki, S.; Terashita, Toru; Nakayama, Masaaki

doi:10.1016/j.physb.2005.12.185

Cited by 18 publications

(12 citation statements)

References 9 publications

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“…The film thickness was fixed at 2.0 mm. We note that the thin film is just oriented along the [0 0 0 1] axis, which was confirmed from X-ray diffraction patterns [4]. Time-resolved PL spectra were measured by using the following OKG method.…”

mentioning

confidence: 68%

“…Until now, however, the dynamical transition process of the PL properties due to the Mott transition in ZnO has not been revealed. In the present work, we have investigated the PL dynamics of crystalline ZnO thin films prepared by an rf-magnetron sputtering method under high-density excitation conditions using an optical-Kerr gating (OKG) method with a time resolution of about 0.8 ps at 10 K. Our finding from timeresolved PL spectra with the ultra-short time resolution is that an EHP-PL band that initially appears in the time region up to $5 ps dynamically transforms to the PL band due to exciton-exciton scattering, the so-called P emission.The samples of crystalline ZnO thin films were grown on a (0 0 0 1) Al 2 O 3 substrate at 650 1C prepared by an rfmagnetron sputtering method [4]. The film thickness was fixed at 2.0 mm.…”

mentioning

confidence: 99%

“…The samples of crystalline ZnO thin films were grown on a (0 0 0 1) Al 2 O 3 substrate at 650 1C prepared by an rfmagnetron sputtering method [4]. The film thickness was fixed at 2.0 mm.…”

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confidence: 99%

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Fast photoluminescence dynamics in ZnO thin films under high-density excitation conditions

Ichida

Wakaiki

Mizoguchi

et al. 2008

Journal of Luminescence

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confidence: 68%

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Fast photoluminescence dynamics in ZnO thin films under high-density excitation conditions

Ichida

Wakaiki

Mizoguchi

et al. 2008

Journal of Luminescence

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“…A thin film of ZnO was deposited on a (0001) Al 2 O 3 substrate by an rf-magnetron sputtering method [4]. A commercially supplied ZnO ceramic plate with a purity of 99.9 % was used as a target.…”

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confidence: 99%

Photoluminescence decay profiles of exciton‐exciton scattering in a ZnO thin film

Wakaiki

Ichida

Mizoguchi

et al. 2010

Phys. Status Solidi (c)

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We have investigated the photoluminescence (PL) dynamics of a ZnO thin film under intense excitation conditions at 10 K. In the ZnO thin film, a PL band due to exciton‐exciton scattering, the so‐called P emission, appears. The optical‐Kerr‐gating method with the ultrashort gating time of 0.6 ps enabled us to obtain precise information of the temporal profiles including the peak energy, the bandwidth and the intensity of the P emission, at various detection energies. We have found that the decay time of the P emission gradually shortens with decreasing detection energy. The change in the decay time can be reasonably attributed to the photon‐like characteristics of the lower polariton branch that is the final state of the exciton‐exciton scattering. Furthermore, we have shown that the decay time of the P emission is phenomenologically determined by the group velocity of the final state although the origin of the long decay time remains to be elucidated (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Furthermore, the thin films usually contain a large residual strain because of a large lattice misfit between ZnO and Al 2 O 3 . We previously reported that the introduction of a low-temperature buffer layer and the high growth temperature of 600 ºC are essential in the growth of high-quality ZnO thin films on the Al 2 O 3 substrate by an rf-magnetron sputtering method [3,4].In the present work, we have performed homoepitaxial growth of ZnO thin films by the rf-magnetron sputtering method in order to further improve the crystalline quality and investigated their excitonic properties. The point of view in this work is to reveal the potential of the rf-magnetron sputtering method in the growth of a high-quality ZnO crystalline film, so we performed homoepitaxy of ZnO.…”

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Optical properties of ZnO homoepitaxial thin films grown by an rf‐magnetron sputtering method

Wakaiki

Kim

Komura

et al. 2006

Phys. Status Solidi (c)

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We have investigated optical properties of ZnO homoepitaxial thin films grown by an rf-magnetron sputtering method. The surface morphology observed by an atomic force microscope shows that the surface roughness is within 1.5 nm. In the reflection spectrum at 10 K, fine structures of excitonic transitions of the A and B excitons are observed. In the photoluminescence (PL) spectrum, the free exciton band is observed in addition to very sharp bound-exciton bands, while the defect-related band is negligibly weak, reflecting high crystallinity of the film. Furthermore, under high-density excitation conditions, a PL band originated from the biexciton is observed. ; however, the growth of ZnO thin films with high quality by the sputtering method has remained as a key subject. In conventional sputtering processes, thin films of ZnO have been grown on Al 2 O 3 substrates at low temperatures between room temperature and ~200 ºC. Such a low growth temperature is one of major factors for degrading crystallinity of films. Furthermore, the thin films usually contain a large residual strain because of a large lattice misfit between ZnO and Al 2 O 3 . We previously reported that the introduction of a low-temperature buffer layer and the high growth temperature of 600 ºC are essential in the growth of high-quality ZnO thin films on the Al 2 O 3 substrate by an rf-magnetron sputtering method [3,4].In the present work, we have performed homoepitaxial growth of ZnO thin films by the rf-magnetron sputtering method in order to further improve the crystalline quality and investigated their excitonic properties. The point of view in this work is to reveal the potential of the rf-magnetron sputtering method in the growth of a high-quality ZnO crystalline film, so we performed homoepitaxy of ZnO. In the reflection spectrum, fine structures of A-and B-exciton transitions are observed. In the photoluminescence (PL) spectrum, the free-exciton PL is observed in addition to very sharp bound-exciton PL, while the defect-related PL is negligibly weak. These results demonstrate high crystallinity of the films. Furthermore, we observe a PL band due to the biexciton under high-density excitation conditions.

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Photoluminescence properties of high-quality ZnO thin films prepared by an RF-magnetron sputtering method

Cited by 18 publications

References 9 publications

Fast photoluminescence dynamics in ZnO thin films under high-density excitation conditions

Fast photoluminescence dynamics in ZnO thin films under high-density excitation conditions

Photoluminescence decay profiles of exciton‐exciton scattering in a ZnO thin film

Optical properties of ZnO homoepitaxial thin films grown by an rf‐magnetron sputtering method

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