The photoconductive characteristics of CdS single nanoribbons were investigated. The device characteristics, including spectral response, light intensity response, and time response, were studied systematically. It is found that CdS nanoribbon has the response speed substantively faster than those ever reported for conventional film and bulk CdS materials and the size of nanoribbons has a significant influence on the response speed with smaller CdS nanoribbons showing higher response speed. The high photosensitivity and high photoresponse speed are attributable to the large surface-to-volume ratio and high single-crystal quality of CdS nanoribbons and the reduction of recombination barrier in nanostructures. Measurements in a different atmosphere demonstrate that the absorption of ambient gas (mainly oxygen) can significantly change the photosensitivity of CdS nanoribbons through trapping electrons from the nanoribbons.

As an interesting layered material, molybdenum disulfi de (MoS 2 ) has been extensively studied in recent years due to its exciting properties. However, the applications of MoS 2 in optoelectronic devices are impeded by the lack of high-quality p-n junction, low light absorption for mono-/multilayers, and the diffi culty for large-scale monolayer growth. Here, it is demonstrated that MoS 2 fi lms with vertically standing layered structure can be deposited on silicon substrate with a scalable sputtering method, forming the heterojunctiontype photodetectors. Molecular layers of the MoS 2 fi lms are perpendicular to the substrate, offering high-speed paths for the separation and transportation of photo-generated carriers. Owing to the strong light absorption of the relatively thick MoS 2 fi lm and the unique vertically standing layered structure,

A facile fabricating method has been established for large-area uniform silicon nanowires arrays. All silicon nanowires obtained were single crystals and epitaxial on the substrate. Six kinds of silicon wafers with different types, surface orientations, and doping levels were utilized as starting materials. With the catalysis of silver nanoparticles, room-temperature mild chemical etching was conducted in aqueous solution of hydrofluoric acid (HF) and hydrogen peroxide (H2O2). The corresponding silicon nanowires arrays with different morphologies were obtained. The silicon nanowires possess the same type and same doping level of the starting wafer. All nanowires on the substrate have the same orientation. For instance, both (100)- and (111)-oriented p-type wafers produced silicon nanowires in the (100) direction. For every kind of silicon wafer, the effect of etching conditions, such as components of etchant, temperature, and time, were systemically investigated. This is an appropriate method to produce a large amount of silicon nanowires with defined type, doping level, and growth direction for industrial applications.

A simple, low-cost blade-coating method is developed for the large-area fabrication of single-crystalline aligned CH3NH3PbI3 microwire (MW) arrays. The solution-coating method is applicable to flexible substrates, enabling the fabrication of MW-array-based photodetectors with excellent long-term stability, flexibility, and bending durability. Integrated devices from such photodetectors demonstrate high performance for high-resolution, flexible image sensors.

As an exotic state of quantum matter, topological insulators have promising applications in new-generation electronic and optoelectronic devices. The realization of these applications relies critically on the preparation and properties understanding of high-quality topological insulators, which however are mainly fabricated by high-cost methods like molecular beam epitaxy. We here report the successful preparation of high-quality topological insulator Bi2Se3/Si heterostructure having an atomically abrupt interface by van der Waals epitaxy growth of Bi2Se3 films on Si wafer. A simple, low-cost physical vapor deposition (PVD) method was employed to achieve the growth of the Bi2Se3 films. The Bi2Se3/Si heterostructure exhibited excellent diode characteristics with a pronounced photoresponse under light illumination. The built-in potential at the Bi2Se3/Si interface greatly facilitated the separation and transport of photogenerated carriers, enabling the photodetector to have a high light responsivity of 24.28 A W(-1), a high detectivity of 4.39 × 10(12) Jones (Jones = cm Hz(1/2) W(-1)), and a fast response speed of aproximately microseconds. These device parameters represent the highest values for topological insulator-based photodetectors. Additionally, the photodetector possessed broadband detection ranging from ultraviolet to optical telecommunication wavelengths. Given the simple device architecture and compatibility with silicon technology, the topological insulator Bi2Se3/Si heterostructure holds great promise for high-performance electronic and optoelectronic applications.

Polarization-sensitive photodetection in a broad spectrum range is highly desired due to the great significance in military and civilian applications. Palladium diselenide (PdSe2), a newly explored air-stable, group 10 two-dimensional (2D) noble metal dichalcogenide with a puckered pentagonal structure, holds promise for polarization-sensitive photodetection. Herein, we report a highly polarization-sensitive, broadband, self-powered photodetector based on graphene/PdSe2/germanium heterojunction. Owing to the enhanced light absorption of the mixed-dimensional van der Waals heterojunction and the effective carrier collection with graphene transparent electrode, the photodetector exhibits superior device performance in terms of a large photoresponsivity, a high specific detectivity, a fast response speed to follow nanosecond pulsed light signal, and a broadband photosensitivity ranging from deep ultraviolet (DUV) to mid-infrared (MIR). Significantly, highly polarization-sensitive broadband photodetection with an ultrahigh polarization sensitivity of 112.2 is achieved, which represents the best result for 2D layered material-based photodetectors. Further, we demonstrated the high-resolution polarization imaging based on the heterojunction device. This work reveals the great potential of 2D PdSe2 for high-performance, air-stable, and polarization-sensitive broadband photodetectors.

Large-area, wafer-scale silicon nanowire arrays prepared by metal-induced chemical etching are shown as promising scalable anode materials for rechargeable lithium battery. In addition to being low cost, large area, and easy to prepare, the electroless-etched silicon nanowires (SiNWs) have good conductivity and nanometer-scale rough surfaces; both features facilitate charge transport and insertion/extraction of Li ions. The electroless-etched SiNWs anode showed larger charge capacity and longer cycling stability than the conventional planar-polished Si wafer.

Compared with polycrystalline films, single-crystalline methylammonium lead halide (MAPbX, X = halogen) perovskite nanowires (NWs) with well-defined structure possess superior optoelectronic properties for optoelectronic applications. However, most of the prepared perovskite NWs exhibit properties below expectations due to poor crystalline quality and rough surfaces. It also remains a challenge to achieve aligned growth of single-crystalline perovskite NWs for integrated device applications. Here, we report a facile fluid-guided antisolvent vapor-assisted crystallization (FGAVC) method for large-scale fabrication of high-quality single-crystalline MAPb(IBr) (x = 0, 0.1, 0.2, 0.3, 0.4) NW arrays. The resultant perovskite NWs showed smooth surfaces due to slow crystallization process and moisture-isolated growth environment. Significantly, photodetectors made from the NW arrays exhibited outstanding performance in respect of ultrahigh responsivity of 12 500 A W, broad linear dynamic rang (LDR) of 150 dB, and robust stability. The responsivity represents the best value ever reported for perovskite-based photodetectors. Moreover, the spectral response of the MAPb(IBr) NW arrays could be sequentially tuned by varying the content of x = 0-0.4. On the basis of this feature, the NW arrays were monolithically integrated to form a unique system for directly measuring light wavelength. Our work would open a new avenue for the fabrication of high-performance, integrated optoelectronic devices from the perovskite NW arrays.