Photoluminescence in silicon implanted with silicon ions at amorphizing doses

Sobolev, N. A.; Kalyadin, A. E.; Kyutt, R. N.; Сахаров, В. И.; Serenkov, I. T.; Shek, E. I.; Afrosimov, V. V.; Tetelbaum, D. I.

doi:10.1134/s1063782611090181

Cited by 6 publications

(2 citation statements)

References 12 publications

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“…Ранее было установлено, что одним из эффективных ионно− лучевых способов создания структур с ДЛ является имплантация в кремний ионов Si + средних энергий [2][3][4]. Изучены спектры фотолюминесценции, зависимость интенсивности люминесценции от интенсивности накачки, дозы ионов, термического бюджета при отжигах, а также роль стабилизации температуры во время облучения.…”

Section: Introductionunclassified

Distribution of D1 Dislocation Luminescence Centers in Si+–Implanted Silicon and the Photoluminescence Model

Nagornykh¹,

Pavlenkov²,

Tetelbaum³

et al. 2014

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

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Section: Introductionunclassified

Distribution of D1 Dislocation Luminescence Centers in Si+–Implanted Silicon and the Photoluminescence Model

Nagornykh¹,

Pavlenkov²,

Tetelbaum³

et al. 2014

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

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“…Therefore, further development of defect engineering in the implantation technology is important for understanding the nature of defects responsible for DRL and revealing the optimal conditions for fabrication of effective LEDs with DRL at room temperature. We have recently studied the influence exerted by the implantation dose of Si ions and by the type of silicon substrates on DRL spectra [6]. This paper presents some new results concerning the influence exerted by the conditions of post-implantation annealing on the evolution of luminescence centers and structural defects in self-implanted Si.…”

Section: Introductionmentioning

confidence: 99%

Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions

Sobolev

Kalyadin

Shek

et al. 2011

SSP

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Luminescent and structural properties of silicon layers with dislocation-related luminescence have been studied. Silicon ions (100 keV) were implanted into n-FZ-Si wafers at a dose exceeding the amorphization threshold by two orders of magnitude. The implantation was not followed by amorphization of the implanted layers. A post-implantation annealing resulted in the formation of luminescence centers and extended structural defects. Some fundamental aspects and specific features in the properties of dislocation-related luminescence lines and extended structural defects were revealed in relation to the annealing conditions.

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Temperature dependence of dislocation-related photoluminescence (D1) of self-implanted silicon subjected to additional boron implantation

Nikolskaya

Королев

Tereshchenko

et al. 2020

Nuclear Instruments and Methods in Physics Research Section B:

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Photoluminescence in silicon implanted with silicon ions at amorphizing doses

Cited by 6 publications

References 12 publications

Distribution of D1 Dislocation Luminescence Centers in Si+–Implanted Silicon and the Photoluminescence Model

Distribution of D1 Dislocation Luminescence Centers in Si+–Implanted Silicon and the Photoluminescence Model

Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions

Temperature dependence of dislocation-related photoluminescence (D1) of self-implanted silicon subjected to additional boron implantation

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