Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions

Abstract

Luminescent and structural properties of silicon layers with dislocation-related luminescence have been studied. Silicon ions (100 keV) were implanted into n-FZ-Si wafers at a dose exceeding the amorphization threshold by two orders of magnitude. The implantation was not followed by amorphization of the implanted layers. A post-implantation annealing resulted in the formation of luminescence centers and extended structural defects. Some fundamental aspects and specific features in the properties of dislocation-related luminescence lines and extended structural defects were revealed in relation to the annealing conditions.

Distribution of D1 Dislocation Luminescence Centers in Si+–Implanted Silicon and the Photoluminescence Model

“…лабораторией, к.ф.−м.н., e−mail: mian@nifti.unn.ru; Белов Алексей Иванович 3 -научный сотрудник, к.ф.−м.н., e−mail: belov@nifti.unn.ru; Королев Дмитрий Сергеевич 1 -ассистент, аспирант, e−mail: dmkorolev@mail.ru; Шушунов Андрей Николаевич 3 -младший научный сотрудник, e−mail: anshu@nifti.unn.ru; Бобров Александр Игоревич 1 -инженер, аспирант, e−mail: bobrov@phys.unn.ru; Павлов Дмитрий Алексеевич -зав. кафедрой, д.ф.−м.н., e−mail: pavlov@unn.ru; Шек Елена Ильинична 4 -старший научный сотрудник, к.ф.−м.н., e−mail: shek@pop.ioffe.rssi.ru структура имплантированных слоев [5]; исследовано также влияние дополнительного ионного легирования на структуру и ДЛ после постимплантационного высокотемпературного отжига [4].…”