Effect of ion doping on the dislocation-related photoluminescence in Si+-implanted silicon

The Effects of Aluminum Gettering and Thermal Treatments on the Light‐Emitting Properties of Dislocation Structures in Self‐Implanted Silicon Subjected to Boron Ion Doping

“…It is due to the specific morphology of the introduced dislocations. Transmission electron microscopy (TEM) studies of samples identical to the samples in this work were carried out by us earlier . It was shown that irradiation of the samples with Si + ions followed by annealing in CCA leads to the generation of 60° and Lomer‐edge dislocations at depths of up to 800 nm with an average dislocation density of ≈3 × 10 8 cm −2 .…”

“…Transmission electron microscopy (TEM) studies of samples identical to the samples in this work were carried out by us earlier. [23][24][25] It was shown that irradiation of the samples with Si þ ions followed by annealing in CCA leads to the generation of 60 and Lomer-edge dislocations at depths of up to 800 nm with an average dislocation density of %3 Â 10 8 cm À2 . Irradiation with B þ and subsequent annealing bring about the generation of a large number of additional 60 dislocations and Lomer-edge dislocations at depths of 100-500 nm.…”

“…[21,22] In addition to the fact that this method is the most compatible with CMOS technology, it makes it possible to modify the parameters of dislocation-related luminescence (DRL) centers in a wide range by the variation of irradiation conditions, additional ion doping, and thermal treatment. [23][24][25] The practical use of DRL is limited by the strong quenching of luminescence intensity with increasing temperature. One way to significantly improve the temperature dependence of the D1 band is to decrease the concentration, as well as the electrical activation of the nonradiative recombination centers in a crystal by gettering and hydrogen passivation.…”

“…Medium‐energy Si + ion implantation leads to the appearance of intense luminescence at 1.5 μm . In addition to the fact that this method is the most compatible with CMOS technology, it makes it possible to modify the parameters of dislocation‐related luminescence (DRL) centers in a wide range by the variation of irradiation conditions, additional ion doping, and thermal treatment …”

Multiphoton microscopy of mesoporous silicon

“…The success of such technological operations depends on adsorption-energy characteristics of the pore surface [6][7][8]. Photoluminescence is an effective method for analyzing the state of pores [9][10][11]. However, the photoluminescence in its traditional form gives an integrating trend of luminescence over the entire volume of the sample.…”