Temperature dependence of dislocation-related photoluminescence (D1) of self-implanted silicon subjected to additional boron implantation

Nikolskaya, Alena; Королев, Д. С.; Tereshchenko, A. N.; Pavlenkov, V. I.; Nagornykh, S. N.; Belov, A. I.; Vasiliev, V. K.; Mikhaylov, A. N.; Tetelbaum, D. I.

doi:10.1016/j.nimb.2020.03.032

Cited by 4 publications

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Light-Emission from Ion-Implanted Group-IV Nanostructures

Brehm

2021

Topics in Applied Physics

View full text Add to dashboard Cite

Silicon photonics is destined to revolutionize technological areas, such as short-distance data transfer and sensing applications by combining the benefits of integrated optics with the assertiveness of siliconbased microelectronics. However, the lack of practical and low-cost silicon-based monolithic light sources such as light-emitting diodes and, in particular, lasers is the main bottleneck for silicon photonics to become the key technology of the 21 st century. After briefly reviewing the state of the art regarding silicon-based light-emitters, we discuss the challenges and benefits of a highly flexible approach: The epitaxial incorporation of group-IV nanostructures into crystalline silicon. We argue that a paradigm change for group-IV quantum dots (QDs) can be achieved by the intentional incorporation of extended point defects inside the QDs upon low energy ion implantation. The superior light-emission properties from such defect-enhanced quantum dots (DEQDs), our present understanding of their structural formation and light-emission mechanisms will be discussed. We will show that useful electrically-driven devices, such as light-emitting diodes (LEDs) can be fabricated employing optically active DEQDmaterial. These LEDs exhibit exceptional temperature-stability of their light emission properties even up to 100°C, unprecedented for purely group-IV-based optoelectronic devices. Thereafter, we will assess the superior temperature stability of the structural properties of DEQDs upon thermal annealing, the scalability of the light-emission with the DEQD density and passivation schemes to further improve the optical properties. The chapter ends with a discussion of future research directions that will spark the development of this exciting field even further.

show abstract

Light-Emission from Ion-Implanted Group-IV Nanostructures

Brehm

2021

Topics in Applied Physics

View full text Add to dashboard Cite

show abstract

Near-infrared and mid-infrared light emission of boron-doped crystalline silicon

Wang,

He,

Dan

2024

Opt. Express

View full text Add to dashboard Cite

The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops created by implanting boron into silicon and annealing represent an enticing strategy to transform highly inefficient silicon into a luminescent material. However, the emission at telecommunication wavelength suffers from the strong thermal quenching effect, resulting in low efficiency at room temperature. Here, we applied a new deep cooling process to address this issue. Interestingly, we find that electrons and holes recombine through defects emitting two photons, one in near infrared (NIR, 1.3∼1.6 µm) and the other in mid-infrared band (MIR, around 3.5 µm). The photoluminescence intensity at NIR increases three fold when the temperature increases from 77 K to 300 K. Furthermore, the NIR light emission of reverse biased silicon diodes was significantly enhanced compared to forward bias, emitting the maximum output power of 42 nW at 60 mA. The results offer new opportunities for the development of infrared light sources in integrated circuits.

show abstract

Intense Violet Electroluminescence of Thin Sio2 Layers with Sno2 Nanocrystals

Romanov,

Parkhomenko,

Vlasukova

et al. 2024

Preprint

View full text Add to dashboard Cite

Temperature dependence of dislocation-related photoluminescence (D1) of self-implanted silicon subjected to additional boron implantation

Cited by 4 publications

References 22 publications

Light-Emission from Ion-Implanted Group-IV Nanostructures

Light-Emission from Ion-Implanted Group-IV Nanostructures

Near-infrared and mid-infrared light emission of boron-doped crystalline silicon

Intense Violet Electroluminescence of Thin Sio2 Layers with Sno2 Nanocrystals

Contact Info

Product

Resources

About