A rapid numerical method of the calculation of X‐ray rocking curves (RC) from crystals with thin surface damaged layers is developed on the basis of a semi‐kinematical approach. The determination of the strain profile in the layer from experimental RC's by a „best correspondence”︁ fitting procedure is demonstrated. Strain profiles in Si crystals doped with boron ions with energy from 40 to 100 keV are obtained and discussed in comparison with the distributions of impurity atoms and radiation defects found by other experimental techniques.

The dislocation structure of hydride vapor phase epitaxial thick GaN layers grown on sapphire is studied by analysis of the microdistortion tensor components. Symmetrical reflections (including reflections from planes forming a large angle with the basal plane) with two modes of scanning (θ and θ–2θ) in two geometries (Bragg and Laue) are used to obtain the tensor components. The instant connections between the tensor components and major dislocation types are specified. Different types of dislocation distributions have been identified in the thick GaN films grown on sapphire with and without undoped and Si-doped metalorganic chemical vapor deposited templates. Transmission electron microscopy was used to confirm the x-ray results by direct visualization of defect rearrangements.

We present x-ray diffraction studies of a CdSe distribution profile along the growth direction in CdSe/ZnSe submonolayer superlattices (SLs) grown by molecular beam epitaxy. The performed theoretical simulations show that the shape of both (004)- and (002)-reflection rocking curves is very sensitive to the vertical CdSe distribution around the intended deposition yplanes. In particular, broadening of the CdSe submonolayer insertions results in a decrease in SL (±1) and (±2) satellite intensities. Comparison of the simulations and experimental data allows us to conclude that CdSe sheets in the as-grown SL samples are asymmetrically broaden up to 5 monolayers.

The Alx Ga1–xN layers with a wide range of AlN molar fraction (0 < x < 0.6) were grown by ammonia MBE on (0001)‐oriented sapphire substrates using silane as the silicon dopant. The structural, electrical and optical properties of the layers were investigated by atomic force microscopy, X‐ray diffraction, Hall, Raman, photoluminescence and cathodoluminescence measurements. It was found that doping affects surface morphology, dislocation density and luminescence intensity of the Alx Ga1–xN layers. A sharp decrease of the luminescence intensity for the heavily doped GaN and Al0.3Ga0.7N layers was explained by enhancement of the nonradiative recombination rate in degenerate GaN layers and by an increase in the defect concentration in AlGaN layers. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

The dislocation structure of hydride vapour phase epitaxial thick GaN layers grown on sapphire is studied by analysis of the microdistortion tensor components. Symmetrical reflections (including reflections from planes forming large angles with the basal plane) with two modes of scanning (θ and θ-2θ) in two geometries (Bragg and Laue) are used to obtain the tensor components. The instant connections between the tensor components and major dislocation types are specified. Different types of dislocation distributions have been identified in the thick GaN films grown on sapphire without and with undoped and Si-doped metal-organic chemical vapour deposited templates.