1980
DOI: 10.1002/pssa.2210600207
|View full text |Cite
|
Sign up to set email alerts
|

Strain profiles in ion-doped silicon obtained from X-ray rocking curves

Abstract: A rapid numerical method of the calculation of X‐ray rocking curves (RC) from crystals with thin surface damaged layers is developed on the basis of a semi‐kinematical approach. The determination of the strain profile in the layer from experimental RC's by a „best correspondence”︁ fitting procedure is demonstrated. Strain profiles in Si crystals doped with boron ions with energy from 40 to 100 keV are obtained and discussed in comparison with the distributions of impurity atoms and radiation defects found by o… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
36
0

Year Published

1983
1983
2017
2017

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 107 publications
(39 citation statements)
references
References 22 publications
(5 reference statements)
1
36
0
Order By: Relevance
“…( ) The strain distribution in the implanted layers is described with a two-sided Gaussian function [11][12][13]15]. It is determined by only four parameters in contradistinction to B-spline basis functions [18,24,25].…”
Section: The Modelmentioning
confidence: 99%
See 1 more Smart Citation
“…( ) The strain distribution in the implanted layers is described with a two-sided Gaussian function [11][12][13]15]. It is determined by only four parameters in contradistinction to B-spline basis functions [18,24,25].…”
Section: The Modelmentioning
confidence: 99%
“…The kinematical [13][14][15][16][17][18] and generalized dynamical theory [21,22] of X-ray diffraction were used in combination with the dynamical approach in case of the Takagi-Topens approximation [11,12,19,20], for the ω/2Θ scans simulation for ion implanted layers. The kinematical and the dynamical approaches are used for thin implanted layers and high-quality bulk material, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…The model was then employed by Wie et al a few years later, who presents the dynamic theory in the layer approximation (Wie et al, 1986). In parallel, Kyutt developed a semikinematical model, which is an approximation of the dynamical theory and allows a strong reduction of the computation time (Kyutt et al, 1980). The semikinematical model was then used by Cembali and Servidori (Cembali et al, 1985), who went back to the dynamical theory based on Vreeland's work a few years later, for an extensive study of implanted materials.…”
Section: Simulation Of the Diffraction Profilementioning
confidence: 99%
“…Most frequently, the rocking cuves are measured (see e.g. Klappe & Fewster, 1994;Milita & Servidori, 1995;Zaumseil & Winter, 1990;Kyutt, Petrashen & Sorokin, 1980), but a number of papers have been published concerning the interference effects revealed in implanted layers by means of X-ray diffraction topography (see e.g. Bonse, Hart & Schwuttke, 1968;Simon & Authier, 1968;Wieteska, 1981;Wieteska & Wierzchowski, 1995a,b).…”
Section: Introductionmentioning
confidence: 99%