Photocurrent multiplication in Ga2O3/CuInGaSe2 heterojunction photosensors

Kikuchi, Kenji; Imura, Shigeyuki; Miyakawa, Kazunori; Ohtake, Hiroshi; Kubota, Minoru; Ohta, Eiji

doi:10.1016/j.sna.2015.01.001

Cited by 5 publications

(6 citation statements)

References 44 publications

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“…Another option is the interplay with the CIGS absorber and resulting changes in band alignment due to the possible interdiffusion of elements at the CIGS/buffer interface for higher T substrate . The reasonable J SC values for our CIGS cells with Ga 2 O 3 buffers imply that there is no blocking behavior, excluding a prominent positive conduction band offset (“spike”) between CIGS absorber and Ga 2 O 3 buffer, as suggested by Kikuchi et al [ 19 ] Nevertheless, small changes in oxygen deficiency of our Ga 2 O 3 depending on T substrate could be responsible for different band offsets and therefore the increase in V OC with increasing T substrate . Heinemann et al reported significant differences for Ga 2 O 3 layers deposited by pulsed laser deposition with and without pronounced oxygen deficiency.…”

Section: Discussionsupporting

confidence: 68%

“…[13] A fast and dry-deposited Ga 2 O 3 buffer layer by sputtering and a Cu(In,Ga)Se 2 (CIGS) as thin-film solar cell absorber material would be an ideal combination. In the past, Ga 2 O 3 was applied to chalcopyritetype materials, such as Ga 2 O 3 /CuGaSe 2 heterojunction photoconductors, [18] a-Ga 2 O 3 /CIGS heterojunction photosensors, [19] or a-Ga 2 O 3 applied on the CIGS surface in CIGS thin-film solar cells. [13,14,20] In this work, we deposit a-Ga 2 O 3 by RF magnetron sputtering from a ceramic target and examine its suitability as buffer layer in thin-film solar cells based on industry-relevant inline CIGS absorbers grown by thermal coevaporation.…”

Section: Introductionmentioning

confidence: 99%

“…A fast and dry‐deposited Ga 2 O 3 buffer layer by sputtering and a Cu(In,Ga)Se 2 (CIGS) as thin‐film solar cell absorber material would be an ideal combination. In the past, Ga 2 O 3 was applied to chalcopyrite‐type materials, such as Ga 2 O 3 /CuGaSe 2 heterojunction photoconductors, [ 18 ] a‐Ga 2 O 3 /CIGS heterojunction photosensors, [ 19 ] or a‐Ga 2 O 3 applied on the CIGS surface in CIGS thin‐film solar cells. [ 13,14,20 ]…”

Section: Introductionmentioning

confidence: 99%

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The Application of Sputtered Gallium Oxide as Buffer for Cu(In,Ga)Se₂ Solar Cells

Witte

Paetel

Menner

et al. 2021

Physica Rapid Research Ltrs

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Crystalline gallium oxide is a promising wide‐bandgap semiconductor material, especially for applications in high‐frequency and high‐power devices. With an optical bandgap energy well above 4 eV, which implies no visible light absorption, it is also a candidate for one of the front‐side layers in thin‐film solar cells. X‐ray amorphous gallium oxide (a‐Ga2O3) deposited by RF magnetron sputtering is applied as an n‐type buffer layer in substrate‐type configuration solar cells based on industry‐relevant inline coevaporated Cu(In,Ga)Se2 (CIGS) absorbers, which include an i‐ZnO/ZnO:Al bilayer as the front electrode. The cells exhibit an efficiency peak at Ga2O3 deposition temperatures in the range of 140–180 °C and show mostly a gain in short‐circuit current density compared with the CdS‐buffered reference cells, as a result of the high optical bandgap of a‐Ga2O3 in the range of 4.6–4.8 eV. The CIGS solar cells with sputtered a‐Ga2O3 buffers reach efficiencies of almost 14%, lacking in open‐circuit voltage and fill factor, whereas the CdS‐buffered cells are on a 16–17% level. Light soaking of the cells leads to a slight improvement of the fill factor, but the gap in open‐circuit voltage of 80–100 mV in contrast to the CdS‐buffered reference cells remains unaffected.

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Section: Discussionsupporting

confidence: 68%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The Application of Sputtered Gallium Oxide as Buffer for Cu(In,Ga)Se₂ Solar Cells

Witte

Paetel

Menner

et al. 2021

Physica Rapid Research Ltrs

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“…In the photodetectors without a Ga 2 O 3 layer, the wavelength at maximum responsivity is 360 nm. The photodiodes composed of Ga 2 O 3 layer on Si substrate or CuInGaSe 2 (CIGS) have a possibility to detect visible light in principle. The spectral rejection ratio is 10 3 or higher in this work and Schottky diode type .…”

Section: Resultsmentioning

confidence: 99%

β‐Ga₂O₃/p‐Type 4H‐SiC Heterojunction Diodes and Applications to Deep‐UV Photodiodes

Nakagomi

Sakai

Kikuchi

et al. 2018

Physica Status Solidi (a)

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Here, pn heterojunction diodes based on β-Ga 2 O 3 /p-type 4H-SiC structures are fabricated. The current-voltage characteristics of the diodes are measured in the temperature range from 23 to 500 C. These diodes exhibit good rectification properties and stability under high temperatures. The rectification ratios exceed 1000 even at 500 C. Deep-ultraviolet (deep-UV) photodiodes are fabricated on the basis of heterojunctions having various β-Ga 2 O 3 thicknesses, which present the maximum responsivity at 250-260 nm and respond to UV pulses as short as %30 μs in real time.

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“…The oxygen partial pressure during Ga 2 O 3 deposition was optimized to minimize the dark current. [ 61 ] Chang et al reported the fabrication of a‐IGZO/a‐GaO x bilayer phototransistors and found that the phototransistors’ performance strongly depended on the oxygen partial pressure during the deposition of the gallium oxide layer. [ 64 ] These results reveal the importance of oxygen introduction during the sputtering process and provide an effective strategy to modulate the a‐Ga 2 O 3 device performance.…”

Section: Preparation Methods Of A‐gaoxmentioning

confidence: 99%

Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films

Liang

Han

2020

Physica Status Solidi (a)

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Deep ultraviolet (UV) photodetectors have wide applications both in civil and military fields. Many materials have been explored to realize deep UV photodetection. Amorphous gallium oxide (a‐GaOx), as a member of transparent amorphous oxide semiconductors (TAOSs), has attracted a great deal of attention due to its ultrawide bandgap and scalable synthesis at room temperature. Plenty of researches have been focused on this topic in recent years. Herein, the latest progresses in the preparation methods of a‐GaOx using radio‐frequency sputtering, pulsed laser deposition, atomic layer deposition, and other deposition techniques are summarized. Dependence of the stoichiometry, crystallinity, optical, electrical, and morphological properties on different preparation parameters and doping/alloying elements is tentatively discussed, as well as those deep UV photodetectors based on a‐GaOx and related thin films. Finally, a short summary with further possible investigations is provided for a better understanding and development of a‐GaOx materials and photodetectors.

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Photocurrent multiplication in Ga2O3/CuInGaSe2 heterojunction photosensors

Cited by 5 publications

References 44 publications

The Application of Sputtered Gallium Oxide as Buffer for Cu(In,Ga)Se₂ Solar Cells

The Application of Sputtered Gallium Oxide as Buffer for Cu(In,Ga)Se₂ Solar Cells

β‐Ga₂O₃/p‐Type 4H‐SiC Heterojunction Diodes and Applications to Deep‐UV Photodiodes

Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films

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Photocurrent multiplication in Ga2O3/CuInGaSe2 heterojunction photosensors

Cited by 5 publications

References 44 publications

The Application of Sputtered Gallium Oxide as Buffer for Cu(In,Ga)Se2 Solar Cells

The Application of Sputtered Gallium Oxide as Buffer for Cu(In,Ga)Se2 Solar Cells

β‐Ga2O3/p‐Type 4H‐SiC Heterojunction Diodes and Applications to Deep‐UV Photodiodes

Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films

Contact Info

Product

Resources

About

The Application of Sputtered Gallium Oxide as Buffer for Cu(In,Ga)Se₂ Solar Cells

The Application of Sputtered Gallium Oxide as Buffer for Cu(In,Ga)Se₂ Solar Cells

β‐Ga₂O₃/p‐Type 4H‐SiC Heterojunction Diodes and Applications to Deep‐UV Photodiodes