Here, pn heterojunction diodes based on β-Ga 2 O 3 /p-type 4H-SiC structures are fabricated. The current-voltage characteristics of the diodes are measured in the temperature range from 23 to 500 C. These diodes exhibit good rectification properties and stability under high temperatures. The rectification ratios exceed 1000 even at 500 C. Deep-ultraviolet (deep-UV) photodiodes are fabricated on the basis of heterojunctions having various β-Ga 2 O 3 thicknesses, which present the maximum responsivity at 250-260 nm and respond to UV pulses as short as %30 μs in real time.
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