Photoconductivity of Anisotropically Deformed Intrinsic Germanium

Self Cite

Theoretical and experimental investigations of the conductivity of elastically bent intrinsic Ge are performed. An high asymmetry of the current-voltage characteristir is predicted and observed in plates with a high velocity of surface recombination. It is connected with the deviation of the spatial distribution of carriers for two opposite directions of current, flowing through the crystal. It is shown that a negative differentia1 resistance in thin crystals may arise a t great electrical fields. Current oscillations connected with the Joule heating of the specimen are observed.

Section: Resultsmentioning

confidence: 92%

Electrical Pinch in Intrinsic Elastically Bent Germanium

Boǐko

Zhadko

Романов

1969

Self Cite

“…I n the case of homogeneous semiconductors and small electric fields ( E <5V/cm) pinch effects caused by conductivity anisotropy [5,6] ,oll/el and R J R , in tellurium have been measured by some authors [7 to 9J.…”

Section: Conductivity a D Iiall Ejfectmentioning

confidence: 99%

“…I n the case of homogeneous semiconductors and small electric fields ( E <5V/cm) pinch effects caused by conductivity anisotropy [5,6] If p is different from 0" and go", two special anisotropy effects exist : the appearence of an electric field component E , due t o ell -+el and E , due t o R, $. R,.…”

Section: Conductivity a D Iiall Ejfectmentioning

confidence: 99%

Transverse Dember Effect and Anisotropy of Carrier Mobilities in Tellurium Single Crystals

Genzow

1973

Neasurenients have been made of the transverse Dember effect, photoelectromagnetic effect, Hall effect, and electrical conductivity of tellurium single crystals in the temperature range from 80 to 300 K. From this data information about magnitude and anisotropy of electron and hole mobilities have been deduced. The relaxation time for scattering of holes and electrons in tellurium single crystals without structure defects is nearly isotropic. the relaxation time for scattering by dislocations is characterized by the relation ( d f ) ) / ( $ ' ' ) ) < Der transversale Dember-Effekt, der photoelektromagnetische Effekt, der Hall-Effekt und die elektrische Leitfahigkeit von Tellureinkristallen wurden im Temperaturbereich zwischen 80 und 300 K gemessen. Daraus wurden Aussagen uber die Gro8e und Anisotropic der Elektronen-und Locherbeweglichkeiten abgeleitet. Die Relaxationszeit fur die Streuung von Lochern und Elektronen in Tellureinkristallen ohne Strukturdefekte ist nahezu isotrop, die Relaxationszeit fur die Streuung an Versetzungen wird durch die Reziehung (~' f ) ) / ( d n ) ) < (dP))!(dP)) < 1 charakterisiert.< /

Injection of Current Carriers in Anisotropic Semiconductor Plates and the Magnetodiode Effect

Gribnikov

Lomova

Романов

1968

Self Cite

It is shown that the current-voltage characteristics in of plate-or filament-shaped long diodes are essentially different for the isotropic and anisotropic cases. For the effective lifetime of excess carriers in anisotropic case is inversely proportional to the external electric field, the direct current through such a diode increases slower than I -U z , that is "ohmically" I -U . As a result of such difference the characteristics of the isotropic plate-shaped diodes strongly depend on pressure and magnetic field (the effect of a small magnetic field may be considered to be equivalent to the effect of pressure). This indicates that significant tensodiode and magnetodiode effects take place. A satisfactory agreement of the experimental data with the theory has been obtained. HoxyseHo xoporuee cornacHe TeopeTmecmx H a~c n e p~-MeHTaJIbHbIX pe3yJIbTaTOB.