Injection of Current Carriers in Anisotropic Semiconductor Plates and the Magnetodiode Effect

Abstract

It is shown that the current-voltage characteristics in of plate-or filament-shaped long diodes are essentially different for the isotropic and anisotropic cases. For the effective lifetime of excess carriers in anisotropic case is inversely proportional to the external electric field, the direct current through such a diode increases slower than I -U z , that is "ohmically" I -U . As a result of such difference the characteristics of the isotropic plate-shaped diodes strongly depend on pressure and magnetic field (the effect of a small magnetic field may be considered to be equivalent to the effect of pressure). This indicates that significant tensodiode and magnetodiode effects take place. A satisfactory agreement of the experimental data with the theory has been obtained. HoxyseHo xoporuee cornacHe TeopeTmecmx H a~c n e p~-MeHTaJIbHbIX pe3yJIbTaTOB.

Double Injection Current and Field Effect in SOS Diodes

“…The decrease of zeff might be connected with the fact that the parameter of the transverse anisotropy of the carrier mobility in the SOS film differs from zero. According to [8], the parameter of anisotropy n is expressed as follows:…”

Effect of mechanical stress on operation of diode temperature sensors

“…But this paper is restricted by one specific stress orientation in silicon transistor along <130>-direction. (We separate ourselves here completely from the papers concerned with the tensodiode effect in large-size structures where stress-induced conductivity anisotropy gives rise to lateral redistribution of injected carrier concentration and, as a consequence, substantial generation-recombination processes at the side diode surfaces [6,7]. )…”

Bases physiques et performances des nouveaux (micro)capteurs magnétiques à semiconducteur

“…Nous présentons ici l'effet de magnétoconcentration et son optimisation pour la réalisation de capteurs magnétiques, puis son extension au cas des magnétodiodes, initialement étudiées en URSS [11,23,24] et au Japon par la firme Sony [25], et pour lesquelles les technologies LSI et VLSI ont permis de développer plusieurs types de micro-capteurs intégrés, aussi testés en Allemagne (Siemens) [26], aux USA (Honeywell) [27] et en Suisse ((Landis et Gyr) [28]). Nous donnerons enfin les performances et les limites ultimes (tenue en température, bruit) que nous avons obtenues avec cette famille de capteurs.…”