Photo-Ionizalion Assisted Photo-CVD of Silicon Nitride Film by Microwave-Excited Deuterium Lamp

Abstract

Silicon nitride films have been formed using a photo-CVD apparatus with a microwave-excited deuterium lamp. The BHF etching rate, 40–70 Å/ min, deposited at 320°C is lower by less than one-tenth than that deposited using a conventional low-pressure mercury lamp, indicating formation of a high density film. The deposition rate has been enhanced dramatically from 13 Å/min to 100 Å/min by incorporating the photo-ionization assisted effect, which is brought about by an ionization of a substrate surface, ions formed by collisions of reactant gases with photoelectrons and photo-ionized ions.

Low-Temperature Deposition of Silicon Nitride Films Using Ultraviolet-Irradiated Ammonia

“…Extensive effort has been devoted to developing methods to deposit silicon nitride (SiN x :H) thin films at low temperatures for use in semiconductor devices. [1][2][3][4][5][6] During conventional low-pressure chemical vapor deposition (LPCVD), the deposition temperature is typically 700°C or higher. 7 Because the thermal energy supplied to the substrate is insufficient at lower LPCVD temperatures, the energy for chemical reaction should be supplemented by sources other than heat.…”