Abstract:A low-temperature silicon nitride (SiNx:H) film-deposition technique that utilizes ultraviolet (UV)-irradiated ammonia (NH3) as the reactant gas and nonirradiated disilane (Si2H6) as the precursor gas was investigated. The UV light was only used to generate active species from NH3, not to irradiate the substrate. To determine the effect of the active species on the deposition process, SiNx:H films were deposited via chemical vapor deposition and their refractive index and composition ratio were evaluated. The … Show more
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