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Silicon nitride films have been formed using a photo-CVD apparatus with a microwave-excited deuterium lamp. The BHF etching rate, 40–70 Å/ min, deposited at 320°C is lower by less than one-tenth than that deposited using a conventional low-pressure mercury lamp, indicating formation of a high density film. The deposition rate has been enhanced dramatically from 13 Å/min to 100 Å/min by incorporating the photo-ionization assisted effect, which is brought about by an ionization of a substrate surface, ions formed by collisions of reactant gases with photoelectrons and photo-ionized ions.

This paper studies the poly-Si crystallization mechanism under the high power (200 W) Nd:YAG solid state pulsed laser annealing system. It is found that the Gaussian-distributed laser beam profile successfully produce large super lateral growth process window. The devices in the SLG process window exhibit field-effect mobility around 250 cm2/V.s and the threshold voltage lower than 1 V. The influence of a-Si film thickness and the laser scan pitch on the process window is also carefully investigated.

Silicon nitride and oxide films have been formed using a photo-CVD apparatus with a microwave-excited VUV lamp. The lamp used was a D2 lamp or a rare gas resonance line lamp such as Xe and Kr. For the nitride film deposited at 320 °C, the BHF etching rate of the film, 40–70Å/min, is lower by less than one-tenth than that deposited using a conventional low-pressure Hg lamp, indicating formation of a high density film. The deposition rate has been enhanced dramatically from 13Å/min to 100Å/min by incorporating the photo-ionization assisted effect, which is brought about by an ionization of a substrate surface and by ions formed by collisions of reactant gases with photoelectrons and photo-ionized ions. The BHF etching rate of the oxide film is considerably lower than those formed using a Hg lamp and excimer lasers, and is similar to that using conventional PE-CVD. Conformal step coverage has been obtained for both the silicon nitride and oxide films.

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