Phosphorus antisite defects in low-temperature InP

Dreszer, P.; Chen, Weimin; Seendripu, K.; Wolk, J. A.; Walukiewicz, W.; Liang, Bing; Tu, C. W.; Weber, E. R.

doi:10.1103/physrevb.47.4111

Cited by 65 publications

(21 citation statements)

References 11 publications

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“…[39,40] Such a low carrier concentration not only confirms that there are fewer native defects in our InP NWs but also indicates that they could potentially be beneficial in optoelectronic applications.…”

Section: à3supporting

confidence: 61%

Soluble InP and GaP Nanowires: Self‐Seeded, Solution–Liquid–Solid Synthesis and Electrical Properties

Liu

Sun

Jian

et al. 2009

Chemistry A European J

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A facile, self-seeded, solution-liquid-solid growth of soluble InP and GaP nanowires with a very low amount of native point defects with respect to the carrier concentrations have been synthesized (see scheme) and characterized. They are potentially promising building blocks in optoelectronic applications.We demonstrate a facile method for self-seeded, solution-liquid-solid growth of soluble InP and GaP nanowires at a temperature of approximately 300 degrees C. Both types of nanowires are single crystals with very small diameters. The synthesized InP nanowires are almost defect-free, whereas the GaP nanowires have some microtwins. The effect of reaction temperatures and input ligand/III/V (III and V indicate elements of Group 13 and 15 respectively) ratios on wire formation is discussed, and two competitive chemical pathways involved in the nanowire formation are proposed. In addition, electrical properties of these III-V nanowires, generated from the solution-based approach, were investigated for the first time. The current-voltage (I-V) and room temperature resistance investigations indicate that both InP and GaP nanowires possess very low native point defects for carrier concentrations and they could be potentially promising building blocks in optoelectronic applications.

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Section: à3supporting

confidence: 61%

Soluble InP and GaP Nanowires: Self‐Seeded, Solution–Liquid–Solid Synthesis and Electrical Properties

Liu

Sun

Jian

et al. 2009

Chemistry A European J

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“…16,18 The native P In donor level was indicated to be about 0.2-0.3 eV below the conduction band, 17,31 and the acceptor level due to Bi pairs/clusters was found at about 0.11 eV above the valence band in InP 0.975 Bi 0.025 . 17 In addition, theoretical simulations suggested that the Bi In anti-site exists in InPBi and the energetic level is located at about 0.39 eV below the conduction band of InPBi at RT.…”

Section: Tmentioning

confidence: 97%

“…Low-temperature growth introduces unavoidably highdensity donor-type impurities 31 and leads to the n-type characteristics of InPBi. 32 The Fermi level is hence close to the conduction band, and the Bi pairs/clusters-induced acceptor levels are filled by electrons in the steady state.…”

mentioning

confidence: 99%

Negative thermal quenching of below-bandgap photoluminescence in InPBi

Chen

et al. 2017

Applied Physics Letters

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This paper reports a temperature-dependent (10-280 K) photoluminescence (PL) study of belowbandgap electron-hole recombinations and anomalous negative thermal quenching of PL intensity in InP 1-x Bi x (x ¼ 0.019 and 0.023). Four PL features are well resolved by curve-fitting of the PL spectra, of which the energies exhibit different temperature dependence. The integral intensities of the two high-energy features diminish monotonically as temperature rises up, while those of the two low-energy features decrease below but increase anomalously above 180 K. A phenomenological model is established that the residual electrons in the final state of the PL transition transfer into nonradiative state via thermal hopping, and the thermal hopping produces in parallel holes in the final state and hence enhances the radiative recombination significantly. A reasonable interpretation of the PL processes in InPBi is achieved, and the activation energies of the PL quenching and thermal hopping are deduced. Published by AIP Publishing. Temperature-dependent photoluminescence (PL) as a powerful probe has been widely employed for characterizing electron-hole recombinations in semiconductors. In particular, the evolution of PL intensity with temperature reveals nonradiative recombination mechanisms:1-3 as temperature rises up, the nonradiative centers in semiconductor capture carriers result in a monotonic quenching to the PL integral intensity. The quenching can be described by a multi-center model 4,5 IðTÞwhere I 0 is the integral intensity before quenching, C q is the nonradiative coefficient being relevant to the carriers lifetime, capture coefficient and effective density of states, and k B and E q are Boltzmann constant and activation energy of the quenching, respectively. Dilute-bismuth (Bi) III-V semiconductors are very promising for possible long-wavelength opto-electronic applications of laser diode, 6 light emitting diode, 7 and photodetector, 8 due to the Bi-induced bandgap shrinkage and spinorbit enhancement.9-11 The PL evolution with temperature in dilute-Bi III-V semiconductors has attracted extensive attention.12-14 For example, it was clarified for GaAsBi that the thermal quenching of bandedge PL is due to two-energy components of cluster localization and alloy disorder.12 For InP 1-x Bi x , which is compatible with InP-based devices and the bandgap reduction is as large as 60-80 meV/%Bi, [15][16][17][18][19] however, the bandedge PL emission is missing and an extraordinarily broad below-bandgap PL emission shows up in a range of 0.9-2.5 lm.15-17 While such a broad-band PL emission may open up a new application window for, e.g., super-broad infrared source covering the whole telecommunication spectral range, the thermal quenching of the broadband PL is yet to be clarified.We in this paper report a temperature-dependent PL study of two InP 1-x Bi x (x ¼ 0.019 and 0.023) epilayers, with a focus on the integral intensity evolution of the belowbandgap PL transitions. The PL integral intensity diminishes with temperature...

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“…Optimal growth conditions were then used for the growth of a 33 nm thick InGaAs capping layer. More precisely, GID in low temperature grown InP are related to a P-rich stoichiometry with a large quantity of P In antisite defects, 19,20 which upon annealing result in an excess of P interstitials that promote interdiffusion. 21,22 The samples used for the experiments on vacancy trapping in compressively strained QWs are shown schematically in Figs.…”

Section: Methodsmentioning

confidence: 99%

Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation

Dion

Desjardins

Schiettekatte

et al. 2008

Journal of Applied Physics

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation Dion, C.; Desjardins, P.; Schiettekatte, F.; Chicoine, M.; Robertson, M. D.; Shtinkov, N.; Poole, P. J.; Wu, X.; Raymond, S.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.Vacancy-mediated intermixing in InAs/InP"001… quantum dots subjected to ion implantation We have investigated the influence of defects emanating from phosphorus implantation damage in the InP capping layer on postgrowth thermally induced intermixing in self-assembled InAs/InP͑001͒ quantum dots ͑QDs͒. Photoluminescence ͑PL͒ spectra from as-grown samples could be described as the superposition of separate PL peaks where each peak corresponded to emission from an ensemble of QDs with a particular height ranging from 4 to 13 ML. Blueshift of up to 270 meV and significant bandwidth broadening were observed in the PL spectra after ion implantation with a fluence of 5 ϫ 10 11 −10 14 cm −2 and subsequent annealing at temperatures ranging from 450 to 600°C. From the analysis of the evolution of the QD peaks upon intermixing, which revealed the coexistence of intact QD PL and a broad PL feature related to heavily intermixed QDs, it was suggested that the bandwidth broadening resulted from spatial inhomogeneity in the compositional intermixing. In order to better understand the mechanism responsible for the ion-implantation-induced intermix...

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Phosphorus antisite defects in low-temperature InP

Cited by 65 publications

References 11 publications

Soluble InP and GaP Nanowires: Self‐Seeded, Solution–Liquid–Solid Synthesis and Electrical Properties

Soluble InP and GaP Nanowires: Self‐Seeded, Solution–Liquid–Solid Synthesis and Electrical Properties

Negative thermal quenching of below-bandgap photoluminescence in InPBi

Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation

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