Soluble InP and GaP Nanowires: Self‐Seeded, Solution–Liquid–Solid Synthesis and Electrical Properties

Abstract

A facile, self-seeded, solution-liquid-solid growth of soluble InP and GaP nanowires with a very low amount of native point defects with respect to the carrier concentrations have been synthesized (see scheme) and characterized. They are potentially promising building blocks in optoelectronic applications.We demonstrate a facile method for self-seeded, solution-liquid-solid growth of soluble InP and GaP nanowires at a temperature of approximately 300 degrees C. Both types of nanowires are single crystals with very small diameters. The synthesized InP nanowires are almost defect-free, whereas the GaP nanowires have some microtwins. The effect of reaction temperatures and input ligand/III/V (III and V indicate elements of Group 13 and 15 respectively) ratios on wire formation is discussed, and two competitive chemical pathways involved in the nanowire formation are proposed. In addition, electrical properties of these III-V nanowires, generated from the solution-based approach, were investigated for the first time. The current-voltage (I-V) and room temperature resistance investigations indicate that both InP and GaP nanowires possess very low native point defects for carrier concentrations and they could be potentially promising building blocks in optoelectronic applications.

Indium phosphide nanowires and their applications in optoelectronic devices

“…The minimum injection temperature used in this experiment was 210 • C and no NWs formation was observed at temperature lower than 210 • C, whereas with increasing temperature, shorter length NWs were formed. Furthermore, the work by Banerjee et al was in stark contrast to the observations made by Liu et al [69] according to which myristic acid was the key factor in NWs growth and its absence caused formation of NPs instead. Whereas according to Banerjee et al the difference in morphology might be due to the usage of singlemolecule precursor which provided different paths to InP formation.…”

“…A more facile route for the fabrication of InP NWs has been presented by Liu et al [69]. In this method, commercially available indium precursor, i.e.…”

Electron transport properties of ZnO, InP, GaP, and Pb<inf>1-x</inf>Mn<inf>x</inf>Se nanowires by two-probe measurements

“…In previous reports [3][4][5][6], the authors have unearthed that the electron transport in nanocontacts plays an important role in electrical properties of two-probe NW devices. They found that the current-voltage demeanour (I-V curves) of the ZnO NW devices at various temperatures could be analyzed to differentiate the nanocontact from the intrinsic nanowire resistance.…”

study on configuration, mechanics, and growth of shape-changing materials

“…Low dimensional structures are "emerging research devices" in the international roadmap for semiconductors for extending the traditional electronic and optoelectronic device performance. Semiconductor nanowires are among the best candidates for largescale integration of optoelectronic functional systems where large sensitivity [1,2,3], dense integration [4,5], and complex polymorphic heterostructures [4,6,7,8,9] [10,11], selective-area (SA) growth [4,12], molecular beam epitaxy (MBE) [13], and chemical beam epitaxy (CBE) [14]; less controllable techniques consist of chemical vapor deposition (CVD) [15], wafer annealing [16], pulse laser ablation (PLD) [17,18,19], and low temperature solution methods [20,21]. The arrays of III-V nanowires have potential for various applications such as monolithic integration of high performance III-V and optoelectronic devices on Si platforms [22].…”