Negative thermal quenching of below-bandgap photoluminescence in InPBi

Chen, Xiren; Wu, Xiaoyan; Li, Yue; Zhu, Liangqing; Pan, Wenwu; Qi, Zhen; Wang, Shumin; Shao, Jianda

doi:10.1063/1.4975586

Cited by 21 publications

(13 citation statements)

References 34 publications

(44 reference statements)

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“…Such a Varshni evolution of PL energy with temperature further excludes the possibility of the feature B being related to the transition of deep level, as the energy of deep‐level emission is temperature‐insensitive. [ 36 ] As the thickness of the Ge deposition is beyond the critical thickness in the sample #GC, it is inferable that the distinctive temperature dependence of the PL energy is possibly associated with Ge tensile strain relaxation. To make further clear the influence of strain relaxation on the PL properties of the tensile‐strained Ge, it is necessary to analyze the temperature dependence of PL intensity.…”

Section: Resultsmentioning

confidence: 99%

“…The enhancement of the PL intensity with temperature is known as an effect of negative thermal quenching (NTQ), and usually implies injection of thermally induced carriers into the transition states. [ 36,38 ] For quantitative analysis, the evolution of the PL integral intensity with temperature is fitted by a model that is taking into account the NTQ effect [ 36 ]

I (T) = \frac{I_{0} (1 + C_{2} e^{- E_{2} / k T})}{(1 + C_{1} e^{- E_{1} / k T})}

where

I_{0}

is the integral PL intensity at 0 K,

C_{1}

and

E_{1}

represent the coefficient and activation energy, respectively, for a typical quenching channel, and

C_{2}

and

E_{2}

are the coefficient and activation energy for a carrier‐injection channel. The fitting parameters are summarized in Table 2 .…”

Section: Resultsmentioning

confidence: 99%

“…The enhancement of the PL intensity with temperature is known as an effect of negative thermal quenching (NTQ), and usually implies injection of thermally induced carriers into the transition states. [36,38] For quantitative analysis, the evolution of the PL integral intensity with temperature is fitted by a model that is taking into account the NTQ effect [36] IðTÞ ¼…”

Section: Resultsmentioning

confidence: 99%

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Photoluminescence Evolution with Deposition Thickness of Ge Nanostructures Embedded in GaSb

Dou

Chen

et al. 2022

Physica Status Solidi (b)

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Germanium (Ge) possesses the intriguing properties of the tunability of indirect to direct bandgap by tensile strain and hence the enhancement of optical and electronic performances, which makes tensile-strained Ge very promising for optoelectronic integrated light sources. [1][2][3][4] Theoretically, a minimum 2% biaxial tensile strain is necessary for the indirect-to-direct bandgap conversion, [3,5] which is, unfortunately, much higher than that induced by the typical Ge-Si thermal mismatch of %0.25%. [6,7] While as an alternative high n-type doping was executed to push ahead with the directgap electronic transition by filling the indirect conduction band states, [8] the threshold was inevitably increased and the luminescent performance degraded, [9] and therefore that how to introduce higher tensile strain to Ge become a hot topic.A micromachine was designed to perform a tensile strain of about 2.7% on a Ge nanomembrane, well beyond the critical stain, to demonstrate the concept of the tensile-strain-induced light emission enhancement at room temperature. [10,11] Ge nanostructures embedded in latticemismatch III-V group matrix were another strategy introduced to realize highly tensile-strained Ge. [1,4,12,13] For example, a tensile strain of about 5% is reached in the self-assembled Ge/InAlAs quantum dots grown on InP substrate. [14,15] Different from the growth of Ge on InP and/or InAs that follows the the Volmer-Weber mode without Ge wetting layer, Ge embedded in antimonide obeys the Stranski-Krastanov growth mode and a clear tensile-strained 2D nanolayer exists. [15,16] As a result and owing to not only the large lattice mismatch of about 7.7% but also the presence of tensile-strained Ge nanolayer, GaSb is a preferred candidate as the matrix of highly

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Section: Resultsmentioning

confidence: 99%

I (T) = \frac{I_{0} (1 + C_{2} e^{- E_{2} / k T})}{(1 + C_{1} e^{- E_{1} / k T})}

where

I_{0}

is the integral PL intensity at 0 K,

C_{1}

and

E_{1}

represent the coefficient and activation energy, respectively, for a typical quenching channel, and

C_{2}

and

E_{2}

are the coefficient and activation energy for a carrier‐injection channel. The fitting parameters are summarized in Table 2 .…”

Section: Resultsmentioning

confidence: 99%

“…The enhancement of the PL intensity with temperature is known as an effect of negative thermal quenching (NTQ), and usually implies injection of thermally induced carriers into the transition states. [36,38] For quantitative analysis, the evolution of the PL integral intensity with temperature is fitted by a model that is taking into account the NTQ effect [36] IðTÞ ¼…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Photoluminescence Evolution with Deposition Thickness of Ge Nanostructures Embedded in GaSb

Dou

Chen

et al. 2022

Physica Status Solidi (b)

Self Cite

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“…8 In addition, the randomly distributed non-radiative centers in materials can reduce overall carrier density and contribute to the thermal quenching of all kinds of PL. 9 On the other hand, negative thermal quenching (NTQ) has been observed for PL in several materials including ZnO, 10 InP 1−x Bi x , 11 Mn 4+ -activated fluoride phosphor, 12 and FASnI 3 . 13 The NTQ of PL manifests as a substantial increase of PL intensity with increasing the temperature in a certain range.…”

Section: Introductionmentioning

confidence: 99%

Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells

Wang

et al. 2021

Journal of Applied Physics

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Large negative thermal quenching (NTQ) of the yellow luminescence (YL) for a temperature increase from 5 to 300 K is observed in nonpolar InGaN/GaN quantum well (QW) samples due to the thermal migration of carriers from the InGaN QW layers to the GaN barrier layers for the first time. Such an unusual phenomenon happens only when the carriers are optically excited inside the QW layers, providing solid evidence for the occurrence of thermal transfer of photoexcited carriers from the QW layers to the GaN barrier layers. A simple model considering the thermal transfer of carriers is proposed to interpret the observed NTQ phenomenon. The thermal activation energy of the carriers is determined by fitting the reciprocal temperature dependence of the YL intensity in the Arrhenius plot with the model.

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“…[ 7 ] The most commonly investigated dilute bismide system is GaAsBi, [ 8–18 ] and several research groups have demonstrated GaAsBi laser diodes. [ 19,20 ] Although there has been less research on dilute bismides in the InP system, [ 21–23 ] this system is important for longer‐wavelength applications such as fiber optic communications and infrared optics sensing. In particular, emission wavelength stability and temperature‐independent operation are highly desirable in fiber optic communication systems, and the temperature‐independent bandgap and Auger effect suppression in dilute bismide compounds with InP‐related material are expected to improve device properties.…”

Section: Introductionmentioning

confidence: 99%

Growth of InPBi on InP(311)B Substrate by Molecular Beam Epitaxy

Akahane

Matsumoto

Umezawa

et al. 2021

Physica Status Solidi (a)

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The growth of InPBi by molecular beam epitaxy on an InP(311)B substrate is investigated. Bi atoms are incorporated into the samples grown at or below 350 °C. A Bi concentration of up to 5% is estimated by X‐ray diffraction and secondary mass spectroscopy measurements. Although the surface roughness increased with decreasing growth temperature and at a high Bi flux, Bi atoms are found to have surfactant effects on the surface flatness of the samples grown at a low Bi flux.

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Negative thermal quenching of below-bandgap photoluminescence in InPBi

Cited by 21 publications

References 34 publications

Photoluminescence Evolution with Deposition Thickness of Ge Nanostructures Embedded in GaSb

Photoluminescence Evolution with Deposition Thickness of Ge Nanostructures Embedded in GaSb

Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells

Growth of InPBi on InP(311)B Substrate by Molecular Beam Epitaxy

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