Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation

Dion, C.; Desjardins, P.; Schiettekatte, F.; Chicoine, M.; Robertson, M.; Shtinkov, N.; Poole, Philip J.; Wu, Xin; Raymond, S.

doi:10.1063/1.2970093

Cited by 3 publications

(4 citation statements)

References 45 publications

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“…This behavior is typical of the intermixing process in InAsP/InP quantum dots with large numbers of grownin P anti-site defects [20][21][22] . Upon annealing, P anti-site defects dissociate to form P interstitials and In vacancies.…”

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confidence: 80%

“…Apart from selecting two quantum dots that happen to have the same emission energy, attempts have been made to dynamically tune two dots into resonance using controls such as applied strain 14 or electric-field 15 . An alternative to dynamic tuning is quantum dot intermixing which has been shown to be an effective method to tune emission energies over a wide spectral range [16][17][18][19][20][21][22] . Intermixing is typically performed ex-situ by rapid thermal annealing 19 but can also be done in-situ using a focused laser 18 .…”

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confidence: 99%

“…This intermixing can be enhanced at lower temperatures by the presence of mobile crystal defects that are either already present (e.g. through judicious choice of crystal growth conditions 20 or ion implantation 21 ) or are thermally created. As these defects diffuse through the InAsP/InP quantum dot they cause an atomic mixing on the group V sites and hence a change in the emission energy of the dot.…”

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confidence: 99%

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In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing

Fiset-Cyr

Dalacu

Haffouz

et al. 2018

Applied Physics Letters

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We demonstrate an in-situ technique to tune the emission energy of semiconductor quantum dots. The technique is based on laser-induced atomic intermixing applied to nanowire quantum dots grown using a site-selective process that allows for the deterministic tuning of individual emitters. A tuning range of up to 15 meV is obtained with a precision limited by the laser exposure time. A distinct saturation of the energy shift is observed, which suggests an intermixing mechanism relying on grown-in defects that are subsequently removed from the semiconductor material during annealing. The ability to tune different emitters into resonance with each other will be required for fabricating remote quantum dot-based sources of indistinguishable photons for secure quantum networks.

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confidence: 80%

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confidence: 99%

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In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing

Fiset-Cyr

Dalacu

Haffouz

et al. 2018

Applied Physics Letters

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“…The long self-diffusion in the InAs crystal is suggested to be mediated by the In vacancies generated as a consequence of the In extraction caused by the Bi substitution [31]. That is, while the In diffusion in a perfect InAs crystal is believed to be negligible, the diffusion barrier is significantly lowered in the defective InAs crystal as In atoms can travel rapidly along the In vacancy sites [32]. We note that practically no Bi was detected by EDX in the porous substrate shown in figure 2(h), ruling out the diffusion of Bi into the InAs substrate.…”

Section: Discussionmentioning

confidence: 99%

In₂Se₃ films produced by Bi substitution in the hot-wall-epitaxy growth of Bi₂Se₃ films on In-containing surfaces

Takagaki¹,

Jenichen²,

Jahn³

et al. 2013

Semicond. Sci. Technol.

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We demonstrate the production of In 2 Se 3 films as the growth outcome when Bi 2 Se 3 films are deposited using the hot-wall-epitaxy method on the substrates that contain In. The Bi atoms in Bi 2 Se 3 are substituted with the In atoms supplied from the InAs substrates. Despite a large lattice mismatch, α-In 2 Se 3 layers grow semicoherently on InAs(1 1 1). The substitution is induced on the InP substrates only when the substrate surface is roughened. The phase of the resultant In 2 Se 3 depends on the degree of the surface roughness. When the roughness is not strong, layered structures of α-In 2 Se 3 are produced by semicoherent heteroepitaxy not only on (1 1 1) but also on high-index surfaces. On heavily damaged InP substrates, the layers primarily consist of γ -In 2 Se 3 . We show, in addition, that the In-induced substitution causes the incorporation of Ga atoms in the In-Se compounds on (In,Ga)As surfaces.

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Postgrowth intermixing of strain engineered InAs/GaAs quantum dots

Nasr¹,

Alouane²,

Ilahi³

et al. 2014

Journal of Alloys and Compounds

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Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation

Cited by 3 publications

References 45 publications

In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing

In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing

In₂Se₃ films produced by Bi substitution in the hot-wall-epitaxy growth of Bi₂Se₃ films on In-containing surfaces

Postgrowth intermixing of strain engineered InAs/GaAs quantum dots

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Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation

Cited by 3 publications

References 45 publications

In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing

In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing

In2Se3 films produced by Bi substitution in the hot-wall-epitaxy growth of Bi2Se3 films on In-containing surfaces

Postgrowth intermixing of strain engineered InAs/GaAs quantum dots

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In₂Se₃ films produced by Bi substitution in the hot-wall-epitaxy growth of Bi₂Se₃ films on In-containing surfaces