1977
DOI: 10.1007/bf00654570
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Phonon structure in the tunneling characteristics of thin proximity effect sandwiches

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Cited by 58 publications
(13 citation statements)
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References 31 publications
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“…As summarized in Tables I and II, for the reference 3D-metals in the weak to strong EPC region, we can obtain reasonable values in both the EPC constants and resistivities when compared with the other DFT not using the US-PPs and experimental data [5,6,[28][29][30], indicating the validity of the present calculated a 2 tr F(x) and a 2 sc F(x). In addition, the calculated ab-plane resistivities for one of the typical anisotropic metals without the charge density wave (CDW) transition, pseudo-2D 2H-NbS 2 are also consistent with the experimental data [31,32].…”
Section: Resultssupporting
confidence: 63%
“…As summarized in Tables I and II, for the reference 3D-metals in the weak to strong EPC region, we can obtain reasonable values in both the EPC constants and resistivities when compared with the other DFT not using the US-PPs and experimental data [5,6,[28][29][30], indicating the validity of the present calculated a 2 tr F(x) and a 2 sc F(x). In addition, the calculated ab-plane resistivities for one of the typical anisotropic metals without the charge density wave (CDW) transition, pseudo-2D 2H-NbS 2 are also consistent with the experimental data [31,32].…”
Section: Resultssupporting
confidence: 63%
“…Nonetheless, if we blindly use the method described in Ref. 13 for all of the junctions we have studied, we obtain h = 0.11 + 0.03 for Cu, in agreement with the value obtained in that reference. The agreement emphasizes the dominant role played by h in determining the amplitude of the phonon structure observed.…”
Section: F(y)= F~ ~ ~Xy)supporting
confidence: 75%
“…The induced gap (f~N) variation due only to changes in dN is indicated by large dots and that due to the contaminated Cu-Pb interface by points in squares.To within a logarithmic correction, Eq. (24) from Ref 13. gives the relationwas derived from the Eliashberg gap equation for an electronphonon matrix element a and a phonon density of states of Lorentzian form centered about wN and of width bN.…”
mentioning
confidence: 99%
“…s.0-s ~ -~rR s (23) where A~ u~k is the value deep in the S layer. This correction arises by the small depression of As at x = 0 which results from the ultra thin N layer.…”
Section: A Physical Basis For Proximity Electron Tunneling Spectroscomentioning
confidence: 99%