2010
DOI: 10.1109/mm.2010.24
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Phase-Change Technology and the Future of Main Memory

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Cited by 360 publications
(189 citation statements)
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References 22 publications
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“…Recently, this traditional storage model is enriched by the new persistent memory technology -a new tier between traditional main memory and storage with attributes from both [6,30,47,54,59]. Persistent memory allows applications to perform loads and stores to manipulate persistent data, as if they are accessing traditional main memory.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, this traditional storage model is enriched by the new persistent memory technology -a new tier between traditional main memory and storage with attributes from both [6,30,47,54,59]. Persistent memory allows applications to perform loads and stores to manipulate persistent data, as if they are accessing traditional main memory.…”
Section: Introductionmentioning
confidence: 99%
“…Since these technologies have low idle power, high storage density, and good scalability properties compared to DRAM [1,2], they have been regarded as potential alternatives to replace or complement DRAM as the technology used to build main memory [3,4,5,6,7,8,9]. Perhaps even more importantly, the non-volatility property of these emerging technologies promises to enable memory-level storage (i.e., persistent memory), which can store data persistently at the main memory level at low latency [10,11,12,13,14,15,16].…”
Section: Introduction Emerging Non-volatile Memory (Nvm) Technologmentioning
confidence: 99%
“…Their DRAM-comparable performance and better-than-DRAM technology-scalability, which can enable high memory capacity at low cost, make these technologies promising alternatives to DRAM [3,4,5]. As such, many recent works examined the use of these technologies as part of main memory [3,4,5,6,7,8,9,10,11,12,13,14,15,16], providing disk-like data persistence at DRAM-like latencies.…”
Section: Introduction Emerging Non-volatile Memory (Nvm) Technologmentioning
confidence: 99%
“…As the increasing size of the memory system, the traditional DRAM-based main memory systems are starting to hit the cost and power limit [1,2,3]. In addition, flash memory has characteristics of not-in-place update, random write, and asymmetric I/O costs among read, write, and erase operations [4,5,6]. Hence, more effort should be taken to overcome the drawbacks to improve access performance of flash-based systems.…”
Section: Introductionmentioning
confidence: 99%