Performance limitations of silicon bipolar transistors

Gaur, S.P.

doi:10.1109/t-ed.1979.19443

Cited by 21 publications

(1 citation statement)

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“…ASE resistance is important for characterizing the largeand small-signal behavior [1], switching characteristics [2], [3] and noise performance [4], [5] of high-speed bipolar transistors. The accurate determination of the base resistance is essential for BJT design and modeling.…”

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confidence: 99%

Three-dimensional base distributed effects of long stripe BJT's: base resistance at DC

Chuang

Law

1998

IEEE Trans. Electron Devices

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Abstract-An analytical model describing the dc voltage and current distributed effects in the polysilicon and intrinsic base regions of long stripe BJT's with double polysilicon technology is presented. It is shown that the bias dependent debiasing effect in the base polysilicon contacts causes an unequal division of base current between two base polysilicon contacts and results in a redistribution of base current in the base regions at different levels of current injection. The base resistance is also modulated by this current re-distribution effect at different biases. The change of base resistance with bias is calculated and the results show the importance of the distributed effects in the base polysilicon region in determining the base resistance.

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confidence: 99%