The Physical Parameters

Selberherr, S.

doi:10.1007/978-3-7091-8752-4_4

Cited by 13 publications

(4 citation statements)

References 111 publications

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“…N a , N d and N B are the doping concentration in the channel, S/D region and the body terminal in a four-terminal TFT respectively. The impact ionization model for the kink effect is the Selberherr model [11], which can be simplified to the classical Chynoweth model [12], as given below for the impact ionization rate for electrons α n and holes α p , respectively:…”

Section: Results and Discussion A IV Fitting Of Conventional Tftsmentioning

confidence: 99%

TCAD Analysis of the Four-Terminal Poly-Si TFTs on Suppression Mechanisms of the DC and AC Hot-Carrier Degradation

Gao

Wang

et al. 2019

IEEE J. Electron Devices Soc.

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Four-terminal poly-Si thin-film transistors (TFTs), with a counter-doped body terminal connected to the floating channel, can suppress both dc and dynamic hot-carrier (HC) degradation of TFTs. With 3-D TCAD simulation, we clarify the underlying mechanisms of the suppression effect and analyze its dependence on the position and width of the body terminal. Under dc HC condition, a wider body terminal or that closer to the drain collects more holes generated from impact ionization in the drain depletion region and suppresses the parasitic bipolar junction transistor effect, subsequently reduces the kink current more effectively. Under dynamic HC condition, the body terminal injects holes at the end of the falling time of the gate pulse, partially removes the non-equilibrium state, significantly relieves the transient maximum electric field in the drain depletion region, thus suppresses the dynamic HC degradation. A wider body terminal can inject more holes and the holes injected by that closer to the drain diffuse to drain depletion region first, thus suppress the dynamic HC degradation better.INDEX TERMS Poly-Si thin-film transistors, body terminal, kink effect, dynamic hot-carrier (HC) degradation.

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Section: Results and Discussion A IV Fitting Of Conventional Tftsmentioning

confidence: 99%

TCAD Analysis of the Four-Terminal Poly-Si TFTs on Suppression Mechanisms of the DC and AC Hot-Carrier Degradation

Gao

Wang

et al. 2019

IEEE J. Electron Devices Soc.

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“…Next, we consider the charge Q it due to the interface states. In indirect-bandgap semiconductors such as Si with a low carrier density below 10 17 cm −3 , the charge (electron and hole) transfer between the interface and bulk states at low carrier density can be explained by the model with Shockley–Read–Hall (SRH) statistics [ 25 – 26 ]. This model is based on the charge capture and emission between the interface and bulk states ( Figure 2 ).…”

Section: Theorymentioning

confidence: 99%

“…Assume that and are the capture rates for electrons and holes per electron and hole, respectively, when all interface states are unoccupied, and and are the emission rates for electrons and holes per electron and hole, respectively. The capture rates per unit volume for electrons and holes ( and ) are given by [ 25 – 26 ]…”

Section: Theorymentioning

confidence: 99%

High–low Kelvin probe force spectroscopy for measuring the interface state density

Izumi¹,

Miyazaki²,

Li³

et al. 2023

Beilstein J. Nanotechnol.

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The recently proposed high–low Kelvin probe force microscopy (KPFM) enables evaluation of the effects of semiconductor interface states with high spatial resolution using high and low AC bias frequencies compared with the cutoff frequency of the carrier transfer between the interface and bulk states. Information on the energy spectrum of the interface state density is important for actual semiconductor device evaluation, and there is a need to develop a method for obtaining such physical quantities. Here, we propose high–low Kelvin probe force spectroscopy (high–low KPFS), an electrostatic force spectroscopy method using high- and low-frequency AC bias voltages to measure the interface state density inside semiconductors. We derive an analytical expression for the electrostatic forces between a tip and a semiconductor sample in the accumulation, depletion, and inversion regions, taking into account the charge transfer between the bulk and interface states in semiconductors. We show that the analysis of electrostatic forces in the depletion region at high- and low-frequency AC bias voltages provides information about the interface state density in the semiconductor bandgap. As a preliminary experiment, high-low KPFS measurements were performed on ion-implanted silicon surfaces to confirm the dependence of the electrostatic force on the frequency of the AC bias voltage and obtain the interface state density.

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“…However, analytical equations can be extremely useful in the design and simulation of semiconductor devices because they can be very easily incorporated in the numerical model and take us away from the inherent complexity of the Monte Carlo technique. A great deal of work has been invested on the derivation of phenomenological expressions that model the various experimentally observed mobility phenomena (Selberherr, 1984). Empirical expressions, derived from experimental curves or Monte Carlo calculations, are simpler than analytical solutions yet very accurate and valid for a wide range of electric field values (Costa et al , 1989; Cordero et al , 1993).…”

Section: Device Structure and Modelingmentioning

confidence: 99%

Modeling the frequency response of p⁺InP/n⁻InGaAs/n⁺InP photodiodes with an arbitrary electric field profile

Pereira

2007

COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

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PurposeThis paper seeks to present a numerical model which is used to obtain the transit time limited frequency response of p‐i‐n photodiodes with an arbitrary electric field profile. The effect of the absorption layer width and bias voltage on the frequency response is also investigated.Design/methodology/approachThe absorption region is divided into any desired number of layers and the continuity equations are solved, for each layer, assuming that within the layer the carriers' drift velocities are constant. The frequency response of the multilayer structure is calculated from the response of each layer using matrix algebra.FindingsThe numerical results agree well with those from the experiment. It is seen that the results, assuming the saturation drift velocities, are usually overestimated especially for low values of the bias voltage or high values of the absorption region width.Research limitations/implicationsThe numerical method under study neglects the capacitive effects which may determine the frequency response of very short devices. In this case a more complete treatment, including also the displacement current, should be carried out.Practical implicationsSoftware development for the design of multilayer photodiodes with optimized frequency response.Originality/valueTo the best of one's knowledge this is an original report of the application of this numerical method to the calculation of the frequency response of p‐i‐n photodiodes. The numerical method, being able to treat in a simple way multilayer structures with any electric field profile, is a very powerful tool in the development of software for the design of efficient photodiodes of various types.

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The Physical Parameters

Cited by 13 publications

References 111 publications

TCAD Analysis of the Four-Terminal Poly-Si TFTs on Suppression Mechanisms of the DC and AC Hot-Carrier Degradation

TCAD Analysis of the Four-Terminal Poly-Si TFTs on Suppression Mechanisms of the DC and AC Hot-Carrier Degradation

High–low Kelvin probe force spectroscopy for measuring the interface state density

Modeling the frequency response of p⁺InP/n⁻InGaAs/n⁺InP photodiodes with an arbitrary electric field profile

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The Physical Parameters

Cited by 13 publications

References 111 publications

TCAD Analysis of the Four-Terminal Poly-Si TFTs on Suppression Mechanisms of the DC and AC Hot-Carrier Degradation

TCAD Analysis of the Four-Terminal Poly-Si TFTs on Suppression Mechanisms of the DC and AC Hot-Carrier Degradation

High–low Kelvin probe force spectroscopy for measuring the interface state density

Modeling the frequency response of p+InP/n−InGaAs/n+InP photodiodes with an arbitrary electric field profile

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Modeling the frequency response of p⁺InP/n⁻InGaAs/n⁺InP photodiodes with an arbitrary electric field profile