Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon–Carbon Source/Drain Regions

Ang, Kah‐Wee; Chui, King-Jien; Tung, Chih-Hang; Balasubramanian, N.; Samudra, Ganesh S.; Yeo, Yee-Chia

doi:10.1109/ted.2007.906941

Cited by 32 publications

(19 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar discussions about the effect of isolation region confinement can be found in Ref. [13]. It can be easily found that S Y Y has the maximum value at W = 0 2 m for PMOSFET.…”

Section: Resultssupporting

confidence: 81%

Impact of Strain Engineering on Nanoscale Strained III–V PMOSFETs

Yc²,

Ouyang³

2012

j nanosci nanotechnol

View full text Add to dashboard Cite

Stress distributions in the strained InGaAs PMOSFET with source/drain (S/D) stressors for various lengths and widths were studied with 3D stress simulations. The resulting mobility improvement was analyzed. Compressive stress along the transport direction was found to dominate the hole mobility improvement for the wide width devices. Stress along the vertical direction perpendicular to the gate oxide was found to affect the mobility the least, while stress along the width direction enhanced in the middle wide width region. The impact of channel width and length on performance improvements such as the mobility gain was analyzed using the Kubo-Greenwood formalism accounting for nonpolar hole-phonon scattering (acoustic and optical), surface roughness scattering, polar phonon scattering, alloy scattering and remote phonon scattering. The novelty of this paper is studying the impact of channel width and length on the performance of InGaAs PMOSFET such as mobility and exploring physical insight for scaling the future III-V CMOS devices.

show abstract

“…Similar discussions about the effect of isolation region confinement can be found in Ref. [13]. It can be easily found that S Y Y has the maximum value at W = 0 2 m for PMOSFET.…”

Section: Resultssupporting

confidence: 81%

Impact of Strain Engineering on Nanoscale Strained III–V PMOSFETs

Yc²,

Ouyang³

2012

j nanosci nanotechnol

View full text Add to dashboard Cite

show abstract

“…Chlorine (Cl 2 ) precursor gas was intermittently introduced to achieve selective epitaxial growth. The mole fraction of substitutional carbon incorporated in the Si:C film was measured to be ~1% based on the reciprocal lattice vector parameters obtained in X-Ray diffraction (Ang et al, 2007). Meanwhile, the total carbon concentration as obtained from SIMS analysis was found to be equal to ~1.3%, which means that around 0.3% of carbon was incorporated in the interstitial sites.…”

Section: Schottky Barrier Modulation Using Large Bandgap Materialsmentioning

confidence: 98%

Germanium Photodetector Technologies for Optical Communication Applications

Ang¹,

Lo²,

Kwong³

2010

Semiconductor Technologies

Self Cite

View full text Add to dashboard Cite

“…1 Si 1−y C y with substitutional carbon concentration C sub or y of 1% or higher have been successfully demonstrated as S/D stressors in planar MOSFETs and in multiple-gate transistors or fin field effect transistors ͑FinFETs͒. [3][4][5][6][7][8] The lateral tensile strain due to Si 1−y C y S/D increases electron mobility, reduces on-state resistance in the transistor channel, and increases the saturation drain current I Dsat . When the on-state channel resistance is very significantly reduced, parasitic series resistance in the source/drain regions ͑R SD ͒ becomes a limiting factor for achieving high I Dsat .…”

Section: Effect Of Substitutional Carbon Concentration On Schottky-bamentioning

confidence: 99%

Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films

Lim¹,

Lee²,

Sinha³

et al. 2009

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

The effective electron Schottky barrier height (ΦBN) of nickel silicide (NiSi:C) formed on silicon-carbon (Si1−yCy or Si:C) films with different substitutional carbon concentrations Csub was investigated. ΦBN was observed to decrease substantially with an increase in Csub. When Csub is increased from 0% to 1.5%, ΦBN is reduced by 200 meV. The results of this work could be useful for the reduction in contact resistance between nickel silicide and silicon-carbon source and drain in strained n-channel metal-oxide-semiconductor field-effect transistors.

show abstract

Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon–Carbon Source/Drain Regions

Cited by 32 publications

References 16 publications

Impact of Strain Engineering on Nanoscale Strained III–V PMOSFETs

Impact of Strain Engineering on Nanoscale Strained III–V PMOSFETs

Germanium Photodetector Technologies for Optical Communication Applications

Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films

Contact Info

Product

Resources

About