Er(3+)-doped 12CaO x 7Al2O3 (C12A7:Er3+) powders were prepared using the sol-gel method. X-ray diffraction, micro-Raman spectra and absorption spectra showed that C12A7:Er3+ powder had been obtained. Sharp and intense Er(3+)-related emission from C12A7:Er3+ powder with different Er3+ concentrations in the visible region at room temperature was investigated by analyzing the local structure of Ca atoms in C12A7, and it revealed that cation sites with low symmetry of the host were beneficial to the photoluminescence of Er3+ ions. The emission lines were attributed to two types of Er3+ centers, isolated Er3+ ions and complex centers formed by aggregation of Er3+ ions. The PL intensity might be affected by free oxygen species relative to Er3+ ions formed by charge compensation. The inverse temperature dependent luminescence from the upper level of 2H11/2 state and that from the lower level of 4S3/2 state implied that the thermalization or thermal equilibrium of electrons between the two closely emission states occurred.
Tb-doped 12CaO x 7Al2O3 (C12A7:Tb3+) powders with strong green emission were prepared using the sol-gel method. X-ray diffraction, micro-Raman spectra, scanning electron microscopy and absorption spectra showed that C12A7:Tb3+ powders with grain size of 200-300 nm were synthesized. Porous powders could be formed as the concentration of Tb3+ was 5 at%. The absorption band around 209 nm was attributed to the host lattice absorption, and the bands around 255 nm and 274 nm were related to the 4f-5d transitions of Tb3+. The absorption intensity of the visible region was enhanced due to the presence of one 100 nm-diameter hole in every grain of C12A7:Tb3+ powders. The emission spectra showed noticeable influence of Tb-Tb cross relaxation, which favored the green photoluminescence (PL) over the blue PL. The study on the concentration quenching indicated that the energy transfers depopulating the 5D3 and 5D4 levels were assigned to the mechanisms of electric dipole-dipole and exchange interaction, respectively.
Stress distributions in the strained InGaAs PMOSFET with source/drain (S/D) stressors for various lengths and widths were studied with 3D stress simulations. The resulting mobility improvement was analyzed. Compressive stress along the transport direction was found to dominate the hole mobility improvement for the wide width devices. Stress along the vertical direction perpendicular to the gate oxide was found to affect the mobility the least, while stress along the width direction enhanced in the middle wide width region. The impact of channel width and length on performance improvements such as the mobility gain was analyzed using the Kubo-Greenwood formalism accounting for nonpolar hole-phonon scattering (acoustic and optical), surface roughness scattering, polar phonon scattering, alloy scattering and remote phonon scattering. The novelty of this paper is studying the impact of channel width and length on the performance of InGaAs PMOSFET such as mobility and exploring physical insight for scaling the future III-V CMOS devices.
The novel thin film solar cell with a nanoplate structure that can solve the conflict between the light absorption and the carrier transport in amorphous silicon thin film solar cell was investigated by TCAD simulations. This new structure has n-type amorphous silicon nanoplate array on the substrate, and p-type amorphous silicon-carbon as window layer and intrinsic amorphous silicon as absorption layer are sequentially grown along the surface of each n-type amorphous silicon nanoplate. Under AM 1.5 G sunlight illumination, the light is absorbed along the vertical direction of nanoplate while the carrier transport is along the horizontal direction. Therefore, nanoplate with the larger height can absorb most of the sunlight. The advantage of this novel structure is that the thickness of the solar cell can be used as thin as possible for effective transport of photo-generated carriers in comparison with the planer one.
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