Performance comparison of 5GHz VCOs integrated by CMOS compatible high Q MEMS inductors

Park, Eun-Chul; Baek, Sang-Min; Song, Taeksang; Yoon, Jun‐Bo; Yoon, Euisik

doi:10.1109/mwsym.2003.1212473

Cited by 11 publications

(1 citation statement)

References 14 publications

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“…The most commonly technique used for allow tunability on these devices is by using a variable capacitor [13,14] or the use of some piezoelectric material that exhibits a magnetostrictive behavior [15,16]. The properties of piezoelectric materials and active devices combined are also an important research topic within tunable applications [17,18], but the high area consumption, technology requirements and resulting performance are not competitive enough for the required industrial applications [19]. On the other hand, experimental evidence shows that some nonlinear effects can be used to achieve the same requirements for tunable devices as well as shown in [13,20,21] where under presence of a relatively high electric field, the stiffness properties of materials are changed [22].…”

Section: Introductionmentioning

confidence: 99%

State equations and tensors symmetry of non-linear piezoelectric materials

Jaramillo-Alvarado¹,

Torres‐Jácome²,

Wade³

et al. 2022

Eng. Res. Express

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The linear behavior of piezoelectric materials is well known from a century ago, but also, the non-linear behavior for these material have found a novel way of applications. Currently, the new technologies as the fifth generation of telecommunications (5G) and Internet of Things (IoT) are demanding high requirements for the performance of the devices operating under these technologies e.g. high quality factor, high thermal efficiency and device fabrication compatibility with the standard fabrication processes for integrated circuits as CMOS, FD-SOI and FinFET. In this work, the non-linear state equations for piezoelectric effect in stress- charge formulation, the transformations laws and the high order tensors structures are presented, in order to allow an easy way to implement it on FEM simulation software. The non-linear behavior of piezoelectric materials is discussed, and taking into account the analysis done in this work, three ways to implement nonlinear effects to design tunable piezoelectric devices for 5G and IoT applications are presented.

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Section: Introductionmentioning

confidence: 99%

State equations and tensors symmetry of non-linear piezoelectric materials

Jaramillo-Alvarado¹,

Torres‐Jácome²,

Wade³

et al. 2022

Eng. Res. Express

View full text Add to dashboard Cite

show abstract

High performance RF passive devices and noise-shielding MOSFET on IC-standard Si wafer for sub-THz applications

Chin

Kao

2013

2013 Asia-Pacific Microwave Conference Proceedings (APMC)

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The operation frequency of a MOSFET is approaching THz as continuously scaling down into 1X nm. Nevertheless, the very high power loss of transmission line on IC-Standard Si wafer (~5 dB/mm at 110 GHz) is the fundamental limitation for Si-based sub-THz IC. Using a simple method to translate standard 10 -cm low resistivity into semi-insulating, very low loss transmission line and broad filters have been realized on Si wafer to 110 GHz, with performance near ideal devices by EM design. The noise coupling of CPW-layout RF MOSFET can also be filtered using a microstrip line design, and a low min. noise figure (NF min ) of 0.5 dB at 10 GHz was measured in a 90 nm MOSFET.

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High-quality Solenoid Inductors on Silicon Wafers

Tai

Liao

2006

2006 International Conference on Communications, Circuits and Systems

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Performance comparison of 5GHz VCOs integrated by CMOS compatible high Q MEMS inductors

Cited by 11 publications

References 14 publications

State equations and tensors symmetry of non-linear piezoelectric materials

State equations and tensors symmetry of non-linear piezoelectric materials

High performance RF passive devices and noise-shielding MOSFET on IC-standard Si wafer for sub-THz applications

High-quality Solenoid Inductors on Silicon Wafers

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