High performance RF passive devices and noise-shielding MOSFET on IC-standard Si wafer for sub-THz applications

Abstract

The operation frequency of a MOSFET is approaching THz as continuously scaling down into 1X nm. Nevertheless, the very high power loss of transmission line on IC-Standard Si wafer (~5 dB/mm at 110 GHz) is the fundamental limitation for Si-based sub-THz IC. Using a simple method to translate standard 10 -cm low resistivity into semi-insulating, very low loss transmission line and broad filters have been realized on Si wafer to 110 GHz, with performance near ideal devices by EM design. The noise coupling of CPW-layout RF MOSFET can also be filtered using a microstrip line design, and a low min. noise figure (NF min ) of 0.5 dB at 10 GHz was measured in a 90 nm MOSFET.