Performance comparison and channel length scaling of strained Si FETs on SiGe-on-Insulator (SGOI)

Performance and new effects in advanced SOI devices and materials

“…This SH effect in SGOI degrades Gmsat, which is more sensitive to SH than Id. Therefore the transconductance appears degraded in SGOI as compared to SOI but after correction of the self-heating a similar increase is obtained for Id and Gm in the SGOI structure [14]. Uniaxial strain engineering is also useful for mobility enhancement for Si film thickness in the sub-10nm range [16].…”

Silicon MOSFETs for ULSI: Scaling CMOS to Nanoscale

“…The former approach involves using an SGOI substrate (discussed in next section) and growing a thin strained-Si layer on top of it (Cai et al, 2004). The two most commonly biaxially SSOIs include a strained-Si layer on SGOI substrates and a strained Si layer directly on insulator.…”

Features of phonon-limited electron mobility behavior of double-gate field-effect transistor with (111) Si surface channel

“…6,7 However, the results yielded by these techniques are not always reproduced and fabrication costs are high because strain device fabrication requires new fabrication processes and/or materials. Recently, the electron mobility on the ͑110͒ Si surface of SG and DG SOI MOSFET's has been analyzed, and various strain techniques have been proposed and experimentally verified.…”