Performance and new effects in advanced SOI devices and materials

Jomaah, J.

doi:10.1016/j.mee.2005.04.069

Cited by 6 publications

(4 citation statements)

References 26 publications

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“…The trapezoidal trigate MOSFET consists of two inclined lateral gates and a flat gate on the top of the gate oxide and channel. One of the main pertinent improvement in the trapezoidal trigate device structure is the mitigation of corner leakage current due to gate overlapping in rectangular device [9]. The other factor of high‐speed operation at reduced power consumption can be achieved by silicon‐on‐insulator (SOI) technology where in the layer of buried oxide (BOx) such as silicon dioxide, air etc.…”

Section: Introductionmentioning

confidence: 99%

Analytical modelling and performance analysis of gate‐ and channel‐engineered trapezoidal trigate MOSFET

Shora

Khanday

2019

IET Circuits, Devices & Systems

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Here, the authors propose an analytical model to evaluate the performance of an advanced trigate MOSFET structure called trapezoidal trigate MOSFET on silicon-on-nothing (TTMSON). The model is based on the solution of Poisson's partial differential equation in three dimensions. The expression for potential distribution has been used to model other device parameters like electric field distribution, quantum inversion charge, and threshold voltage. The TTMSON device immunity to various short channel effects (SCEs), such as drain-induced barrier lowering (DIBL) and sub-threshold swing, has been examined. A detailed analysis of the gate and channel engineering techniques like dual material gate, graded channel, and dual material gate with graded channel has also been carried out to choose the best device structural configuration for enhancing the device performance and mitigating SCEs in nano-regime. In addition, the effect of inclination angle on different performance parameters has been considered. The proposed analytical model of TTMSON has been verified by comparing the model results with the simulation results using the numerical device simulator ATLAS.

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Section: Introductionmentioning

confidence: 99%

Analytical modelling and performance analysis of gate‐ and channel‐engineered trapezoidal trigate MOSFET

Shora

Khanday

2019

IET Circuits, Devices & Systems

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“…In order to extend CMOS scaling down to the performance limit, double-gate (DG) MOSFET is proposed as a promising non-classical structure to replace the traditional bulk CMOS devices. [1,2] Paralleling with the advance of fabrication technology and structure revolution, [3] device physics research [4] and compact model development of DG MOSFET also become intense subjects. The previous DG MOSFET compact models, however, were derived mainly from Poisson equation on the assumption that only the mobile charge was considered while the doping effect was neglected.…”

Section: Introductionmentioning

confidence: 99%

A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

He¹,

Liu²,

Zhou³

et al. 2011

Chinese Phys. B

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“…Several studies have been performed, principally with silicon-on-insulator (SOI) technology which is used for MOSFETs in high temperature fields. Also the inner structure of the SOI was modeled by means of thermal analysis in order to achieve devices which can withstand higher temperatures [3][4][5][6][7]. Although the heat generation occurs in SOIs, the heat transfer depends on the external structure, i.e.…”

Section: Introductionmentioning

confidence: 99%

Transient Characteristic of a Metal-Oxide Semiconductor Field Effect Transistor in an Automotive Regulator in High Temperature Surroundings

Kang

Shin²

2010

Transactions on Electrical and Electronic Materials

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An automotive IC voltage regulator which consists of one-chip based on a metal-oxide semiconductor field effect transistor (MOSFET) is investigated experimentally with three types of packaging. The closed type is filled with thermal silicone gel and covered with a plastic lid on the MOSFET. The half-closed type is covered with a plastic case but without thermal silicone gel on the MOSFET. Opened type is no lid without thermal silicone gel. In order to simulate the high temperature condition in engine bay, the operating circuit of the MOSFET is constructed and the surrounding temperature is maintained at 100ºC. In the overshoot the maximum was mainly found at the halfclosed packaging and the magnitude is dependent on the packaging type and the surrounding temperature. Also the impressed current decreased exponentially during the MOSFET operation.

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Performance and new effects in advanced SOI devices and materials

Cited by 6 publications

References 26 publications

Analytical modelling and performance analysis of gate‐ and channel‐engineered trapezoidal trigate MOSFET

Analytical modelling and performance analysis of gate‐ and channel‐engineered trapezoidal trigate MOSFET

A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

Transient Characteristic of a Metal-Oxide Semiconductor Field Effect Transistor in an Automotive Regulator in High Temperature Surroundings

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