Performance analysis of symmetric High-k Spacer (SHS) Trigate SOI TFET

Rao, M.Damodhar; Ranjan, Rajeev; Pradhan, K P; Sahu, Prasanna Kumar

doi:10.1109/icdcsyst.2016.7570642

Cited by 5 publications

(1 citation statement)

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“…This paper focuses on the TID effect in SOI-TFET with oxide/source overlap, the structure of the device is described in Figure 1 . The gate of the device overlaps the oxide and the source can increase the on-state current [ 10 , 11 , 12 ], while the SOI structure can eliminate the latch-up effect and reduce parasitic capacitance [ 13 , 14 , 15 , 16 ]. It is found that the current switch ratio and subthreshold swing of the device deteriorates while threshold voltage has a slight drop, but it is not too sensitive after irradiation.…”

Section: Introductionmentioning

confidence: 99%

Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET

et al. 2021

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Since the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect, SOI-TFET with the oxide/source overlap structure is a device with development potential. The total ionizing dose (TID) effect on SOI-TFET was studied by discussing the switching ratio, band–band tunneling rate, threshold voltage, sub-threshold swing and bipolar effect of the device under different doses of irradiation. At the same time, simulations prove that selecting the proper thickness of the buried oxide (BOX) layer can effectively reduce the influence of the TID effect. This provides a way of direction and method for research on the irradiation effects on the device in the future.

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