We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses a novel, on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. Two device innovations are introduced. Firstly, a multiplexer design which utilises split gates to allow the multiplexer to divide three or more ways at each branch. Secondly we describe a device architecture that utilises a multiplexer-type scheme to lock charge onto gate electrodes. The design allows access to and control of gates whose total number exceeds that of the available electrical contacts and enables the formation, modulation and measurement of large arrays of quantum devices. We fabricate devices utilising these innovations on n-type GaAs/AlGaAs substrates and investigate the stability of the charge locked on to the gates. Proof-of-concept is shown by measurement of the Coulomb blockade peaks of a single quantum dot formed by a floating gate in the device. The floating gate is seen to drift by approximately one Coulomb oscillation per hour.Motivation for the measurement of large numbers of quantum devices arises both from interest in the associated physical properties such as the formation of minibands [1] and from the drive to up-scale and integrate quantum phenomenon, such as spin physics[2], into future technology and quantum information processing [3]. Much of the physics of interest is only observable using cryogenic systems and the number of coupled devices is limited by the number of available contacts. Recent work has shown the use of multiplexing to greatly increase the number of isolated quantum devices available for measurement on a single chip and single cool-down [4,5] and frequency multiplexing, for the readout of spin qubits [6], has been demonstrated as a potential up-scaling route. The significant challenges presented by the need to upscale however are far from surmounted.The measurement of many individually addressable quantum devices has led to initial studies on yield[4], reproducibility [7] and statistical analysis of complex quantum phenomena [8]. The split gate[9-11] can be considered as the building block for more complex gatedefined devices, such as quantum dots [12]. Tuneable quantum dots require stable charge on several surface gates simultaneously in order to function. The multiplexing architecture presented in [4] doesn't allow the simultaneous use of multiple gates. We therefore present two innovations that facilitate the fabrication and measurement of large interacting quantum device arrays.We firstly show how a split gate can be used within a multiplexer-type addressing system, to enable the multiplexer to divide three or more ways at each node rather than two. Figure 1 shows a schematic of a single node of a 3-way multiplexer. A semiconducting two dimensional electron gas (2DEG), shown in blue, divides into three

Nitrogen-doped carbon dots (CDs) have been produced by a new facile "bottom-up" synthesis, using the room-temperature reaction between acetonitrile and sodium-naphthalene. The obtained hydrophobic CDs are monodisperse (∼2.6 nm) and present an excitation-independent emission at ∼588 nm with a small full width at half-maximum (FWHM) of ∼52 nm. The CDs can be simply modified to be hydrosoluble and have been demonstrated to be an efficient red-emission agent for both in vivo and in vitro bioimaging.

Chiral hollow nanovolcano array (HNVA) film and chiral hollow nanoshells (HNSs) are simultaneously fabricated via a new strategy of colloidal lithography technique. The chirality of both chiral plasmonic nanostructures, which arises from the asymmetric charge oscillation and electric field distributions, can be well controlled by regulating the opening-angle of the nanounits during the metal depositions. The large-area HNVA films exhibit strong chiroptical responses in the ultraviolet−visible region with g-factor of 0.15 and possess remarkable transferability for better adaptability of different application situations. The chiral HNSs, which are simultaneously obtained during the deposition, is equipped with adjustable chirality and integrability. The obtained HNVA films were transferred to specific substrates, e.g., polydimethylsiloxane (PDMS), hydrogels, and high-curvature surfaces, maintaining the original chiroptical properties and excellent mechanical strength. Deformable chiral flexible metamaterial is obtained by incorporating the chiral HNSs in the hydrogel, enabling the ultrasensitive detection of water content in the hydrogel. Overall, this work will contribute to the study of chiral metamaterials by providing two kinds of newly developed chiral plasmonic metamaterials with tunable chirality and inspiring progressing ways for the flexible devices of artificial chirality.

Insertion/deletion (InDel) polymorphisms have been widely used in the fields of population genetics, genetic map constructions, and forensic investigations owing to the advantages of their low mutation rates, widespread distributions in the human genome, and small amplicon sizes. In order to provide more InDels with high discrimination power in Chinese populations, we selected and constructed one novel multiplex PCR‐InDel panel for forensic individual identification. Genetic distributions of these 35 InDels in five reference populations from East Asia showed low genetic differentiations among these populations. Forensic efficiency evaluations of these InDels revealed that these loci could perform well for forensic individual identifications in these reference populations. In the meantime, genetic diversities and forensic parameters of these InDels were further investigated in the studied Kazak group. Mean value of polymorphism information content for 35 InDels was 0.3611. Cumulative power of discrimination of 35 InDels was 0.99999999999999603 in Kazak group. Given these results, the panel is suitable for individual identifications in the studied Kazak and these reference populations.

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Photothermal agents (PTAs) with high biocompatibility and therapeutic efficacy have become particularly fascinating, however, knowledge of their photothermal performance is rather limited. Herein, rationally designed core-shell TiO nanoparticles have been fabricated using a mild hydrogenation method, where NaBH was used as the H source. The resultant TiO possesses strong optical absorption in the NIR region and remarkable photothermal conversion capability and stability, leading to a high inhibition rate on cancer cells. In particular, its photothermal conversion efficiency is as high as 55.2%, which is 204% that of the fully hydrogenated amorphous TiO. More importantly, the underlying mechanism is proposed. It is revealed that while the oxygen vacancies induced by the hydrogenation can introduce defect levels in the band gap and enhance the optical absorption, the superfluous oxygen vacancies and defects reduce the photothermal conversion capability and thermal conductivity to a large extent. Controlling the hydrogenation degree and maintaining a certain extent of crystallization are, therefore, crucial to the photothermal properties. This new understanding of the photothermal conversion mechanism may have provided a fresh route to design and optimize PTAs and inspire considerable interest to turn a large variety of semiconductor metal oxides into competent PTAs by appropriate hydrogenation.

Rubisco, which consists of eight large subunits (RBCLs) and eight small subunits (RBCSs), is a major photosynthetic enzyme that is sensitive to chilling stress. However, it is largely unclear how plants maintain high Rubisco content under low temperature conditions. Here, we report that tomato WHIRLY1 (SlWHY1) positively regulates the Rubisco level under chilling stress by directly binding to the promoter region of SlRbcS1, resulting in the activation of SlRbcS1 expression. SlRbcS1-overexpressing lines had higher Rubisco contents and were more resistant to chilling stress compared with the wild type. Quantitative real-time PCR analyses showed that, among the five RbcS genes, only SlRbcS1 expression is up-regulated by chilling treatment. These results indicate that SlWHIRLY1 specifically enhances the levels of SlRbcS1 and confers tolerance to chilling stress. The amino acid sequence of SlRBCS1 shows 92.67% identity with those of another two RBCS proteins and three residues are specifically found in SlRBCS1. However, mutation of these residues to alanine in SlRBCS1 does not influence its function during cold adaptation. Thus, we conclude that high levels of Rubisco, but not the specific residues in SlRBCS1, play important roles in tolerance to chilling stress in tomato.

to be as the channel materials of FETs. [9] Recently, the HfSe 2 has been predicted to possess much higher carrier mobility above 3000 cm 2 (V s) −1 surpassing that of Si more than double so that scientists are attracted to fall in this field. [9] The backgated FETs of exfoliated multilayer HfSe 2 with a high on/off current ratio of >7.5 × 10 6 on SiO 2 /Si substrate were initially fabricated; nevertheless, the extraced carrier mobilities are lower than 1 cm 2 (V s) −1 . [10] Then the top-gated multilayer HfSe 2 FETs with high κ dielectrics grown by atomic layer deposition were demonstrated this year, but the multilayer HfSe 2 was still obtained by mechanical exfoliation and the carrier mobilities of devices were only enhanced to ≈4 cm 2 (V s) −1 . [11] Moreover, the phototransistors