Performance Analysis of Double Gate Dielectric Modulation in Schottky FET as Biomolecule Sensor

Abstract

In this article, a charge-plasma (CP)-based double gate schottky barrier FET structure has been investigated using dielectric controlled biomolecule sensor. The use of Hafnium as a charge plasma at the source side encourages an n+ charge plasma in an un-doped silicon region, which expressively decreases the Schottky barrier thickness. The oxide below the Metal gate M 1 and M 2 is etched out to create nanogap openings for biomolecule nding. Here, the existence of molecules is categorized by the modi cation in oxide material inside the nanogap and the related charge densities, hence, to controls the tunneling thickness at the Metal-source-silicon channel interface, also with the help of plasma charges in an intrinsic-Si lm. This paper is mainly focused on the fundamental physics of the proposed structure and approximations of their relative sensitivity detecting enactment. The sensing enactment has been assessed for charged biomolecules and charge-neutral biomolecules by widespread device simulation, and the special properties of the biomolecule. The proposed device improves its control over the tunneling region and this has been used for the sensing, ensuing to larger on-state drain current (I ds ) sensitivity for biomolecule. Hence, the gate voltage is recognised as the active design parameters for e cient reduction. Moreover, the sensing of the SB FET-based biosensor threshold voltage (V th ), abnormality in the on-current (Ion), and Ion/Ioff ratio has been shown. Also, the charge-plasma (CP)based double gate schottky barrier FET simulations calibrated with experimental results. Hence, the relative change in Ion using charge-plasma (CP)-based double gate schottky barrier FET biosensor maintain improved detecting ability for biomolecule recognition.

High-Frequency Performance Characteristics of the Double-Gate Schottky Barrier Tunnel Field Effect Transistor in Analog and Radio-Frequency Applications

“…Further, increases electric fields in the source region are responsible for enhanced tunneling. 18,19 As a result, the proposed device experiences increased band bending, which increases the probability of tunneling as well as the I ON current. The Schottky barrier height of the DG-SBTFET is Ф b = 0.65 eV.…”