2022
DOI: 10.1007/s12633-022-01828-y
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Recent Study on Schottky Tunnel Field Effect Transistor for Biosensing Applications

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Cited by 3 publications
(1 citation statement)
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“…Nevertheless, SB-MOSFETs have many advantages compared to conventional MOSFETs. The intrinsic Schottky barrier between metal S/D and the semiconductor results in lower drive current [ 11 , 12 , 13 ]. Many SB devices, like dual metal gate, source/drain pocket doping, work function engineering, and plasma-based structures have been suggested in recent years to resolve the difficulties of SB-MOSFET, including ambipolar conduction and lower drive current [ 14 , 15 , 16 , 17 , 18 , 19 , 20 ].…”
Section: Introductionmentioning
confidence: 99%
“…Nevertheless, SB-MOSFETs have many advantages compared to conventional MOSFETs. The intrinsic Schottky barrier between metal S/D and the semiconductor results in lower drive current [ 11 , 12 , 13 ]. Many SB devices, like dual metal gate, source/drain pocket doping, work function engineering, and plasma-based structures have been suggested in recent years to resolve the difficulties of SB-MOSFET, including ambipolar conduction and lower drive current [ 14 , 15 , 16 , 17 , 18 , 19 , 20 ].…”
Section: Introductionmentioning
confidence: 99%