Enhanced Efficiency of Graphene-Silicon Schottky Junction Solar Cell through Pyramid Arrays Texturation

Abstract

Graphene/silicon (Gr/Si) Schottky junction solar cells have attracted extensive research interest due to their simple structure and potential low-cost. Surface texturing is an important part of high-e ciency solar cells. In this paper, the effects of TMAH concentration, IPA concentration and etching time on the structure and anti-re ection ability of silicon pyramid array (SiPa) were systematically studied to obtain uniform and reliable pyramid array. Under the optimized conditions, a large scale SiPa with uniform size distribution was obtained and applied to Gr/Si solar cells. The results show that the TMAH etched SiPa has a better Schottky junction contact between graphene and the SiPa surface, and the SiPa can further improves the ability of collecting photogenerated carriers. Compared with Gr/Si solar cells, the power conversion e ciency (PCE) of Gr/SiPa device is 1.66 times higher than that of Gr/Si solar cells. Finally, Gr/SiPa devices with PCE of 5.67% is successfully obtained by HNO 3 doping. This work proposes a new strategy for TMAH etching SiPa to improve the performance of Gr/Si solar cells.

Enhanced and Passivated Co-doping Effect of Organic Molecule and Bromine on Graphene/HfO2/Silicon Metal–Insulator–Semiconductor (MIS) Schottky Junction Solar Cells

“…Further optimizations in these solar cells were accomplished by employing various strategies, such as surface texturing, − depositing antireflective coatings, , chemical doping, and the use of an interfacial layer among the Si and vertical Gr. , Controlling the interface across the vertical Gr and Si via the use of interfacial layers is a unique technique to reduce the charge recombination. There are a lot of dangling bonds over silicon that lead to inducing the charge recombination, which is a severe issue in photovoltaics .…”