Pb(Zr,Ti)O₃recording media for probe data storage devices prepared by rf magnetron sputtering

Abstract

Pb(Zr,Ti)O 3 (PZT) thin films for ferroelectric probe data storage technology were studied. (001)-oriented PZT thin films were deposited on SrRuO 3 / SrTiO 3 substrates by rf magnetron sputtering. Dc voltage was applied on the films using a metal-coated tip and the poling region was observed by scanning nonlinear dielectric microscopy (SNDM). The contrasts in the positive and negative poling regions in the SNDM images obtained were improved by using the PZT films after ion-beam irradiation. This suggests that a surface layer of a few nanometers in thickness was formed on the as-grown PZT film and the polarization was not invertible in the surface layer. The deposition condition was examined with focus on deposition temperature. Nanosized domain dots were successfully formed on a PZT film deposited at 550 °C.

Domain switching of ferroelectric polymer film using piezoelectric force microscopy

“…It is possible to obtain various physical properties by applying a voltage to the needle. To observe the microscopic structure and domain walls in ferroelectric ceramics and biological macromolecules, piezoelectric response force microscopy [19][20][21] (PFM) and scanning nonlinear dielectric microscopy [22][23][24] (SNDM) have been widely used owing to their high resolution. At the interface of the domain wall, the response is changed by the difference of the crystalline structure.…”

Overview of Probe-based Storage Technologies

“…The density up to 3.6 Tb/in 2 on an atomically smooth PZT medium has been achieved [ 61 ]. The contrast in the positive and negative poling region can be significantly mitigated by either carefully controlling the deposition temperature or using the PZT films exposed to an ion beam using an electron cyclotron resonance (ECR) ion source with an argon and oxygen gas mixture [ 62 ]. The minimum single-digit domain with good stability in PZT film was recently reported to 4 nm in diameter, suggesting for a recording density of 40 Tbit/in 2 [ 63 ].…”

Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlOxbottom electrode for the La-doped Pb(Zr,Ti)O3ferroelectric capacitor

“…Among perovskite materials, lead zirconate titanate [PZT, Pb(Zr,Ti)O 3 ] and its modified materials including La-doped PZT (PLZT) are the most promising and the most extensively studied materials. [11][12][13][14][15] The crystalline state of PZT is significantly affected by temperature, pressure, and ambient species in postdeposition annealing (PDA). 4,11,12,14,[16][17][18] Therefore, the crystallization mechanism during PDA has been widely reported for PZT prepared by sol-gel deposition, 16,[19][20][21][22][23][24] pulsed-laser deposition (PLD), 25,26) and metal-organic deposition (MOD).…”

“…[11][12][13][14][15] The crystalline state of PZT is significantly affected by temperature, pressure, and ambient species in postdeposition annealing (PDA). 4,11,12,14,[16][17][18] Therefore, the crystallization mechanism during PDA has been widely reported for PZT prepared by sol-gel deposition, 16,[19][20][21][22][23][24] pulsed-laser deposition (PLD), 25,26) and metal-organic deposition (MOD). 27) The Pt=Ti bottom electrode structure has been employed for FeRAM since Pt is chemically and thermally stable, and the Ti layer well adheres to Pt and SiO 2 interlayers.…”