Overview of Probe-based Storage Technologies

Wang, Lei; Yang, Cihui; Wen, Jing; Gong, Si Di; Peng, Yuan Xiu

doi:10.1186/s11671-016-1556-9

Cited by 19 publications

(16 citation statements)

References 113 publications

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“…By contrast, tribochemical wear is attributed to stress-assisted bond dissociation [ 5 ] or along with chemical corrosion in some cases [ 6 ]. Single crystal silicon (Si) serves as one of the main material of semiconductor chips [ 7 , 8 ], and chemical mechanical polishing (CMP) is the most effective approach to manufacture atomically smooth surface for Si semiconductor substrate. The material removal occurring before Si material yield in CMP is generally dominated by tribochemical reaction [ 9 , 10 ].…”

Section: Introductionmentioning

confidence: 99%

Sliding Speed-Dependent Tribochemical Wear of Oxide-Free Silicon

Chen

et al. 2017

Nanoscale Res Lett

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Fundamental understanding of tribochemical wear mechanism of oxide-free single crystalline silicon (without native oxide layer) is essential to optimize the process of ultra-precision surface manufacturing. Here, we report sliding speed-dependent nanowear of oxide-free silicon against SiO2 microspheres in air and in deionized water. When contact pressure is too low to induce Si yield, tribochemical wear occurs with the existence of water molecules and wear volume decreases logarithmically to constant as sliding speed increased. TEM and Raman observations indicate that the dynamics of rupture and reformation of interfacial bonding bridges result in the variation of tribochemical wear of the oxide-free Si with the increase of sliding speed.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-017-2176-8) contains supplementary material, which is available to authorized users.

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Section: Introductionmentioning

confidence: 99%

Sliding Speed-Dependent Tribochemical Wear of Oxide-Free Silicon

Chen

et al. 2017

Nanoscale Res Lett

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“…Attractiveness of phase-change materials arises from a phenomenon that it can be switching reversibly between a metastable amorphous phase with high electrical resistivity and low optical reflectivity and a stable crystalline phase with low electrical resistivity and high optical reflectivity when suffering from either electrical or optical stimulus [ 73 ]. Such remarkable differences on the electrical/optical properties between amorphous and crystalline phases make phase-change materials very promising for a variety of NVM applications such as optical disc [ 33 , 74 ], PCRAM [ 35 , 75 – 77 ], scanning probe phase-change memory [ 36 , 78 – 80 ], and phase-change photonic device [ 37 , 81 – 83 ], as shown in Fig. 9 .…”

Section: Reviewmentioning

confidence: 99%

Recent Advances on Neuromorphic Systems Using Phase-Change Materials

Wang

Wen

2017

Nanoscale Res Lett

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Realization of brain-like computer has always been human’s ultimate dream. Today, the possibility of having this dream come true has been significantly boosted due to the advent of several emerging non-volatile memory devices. Within these innovative technologies, phase-change memory device has been commonly regarded as the most promising candidate to imitate the biological brain, owing to its excellent scalability, fast switching speed, and low energy consumption. In this context, a detailed review concerning the physical principles of the neuromorphic circuit using phase-change materials as well as a comprehensive introduction of the currently available phase-change neuromorphic prototypes becomes imperative for scientists to continuously progress the technology of artificial neural networks. In this paper, we first present the biological mechanism of human brain, followed by a brief discussion about physical properties of phase-change materials that recently receive a widespread application on non-volatile memory field. We then survey recent research on different types of neuromorphic circuits using phase-change materials in terms of their respective geometrical architecture and physical schemes to reproduce the biological events of human brain, in particular for spike-time-dependent plasticity. The relevant virtues and limitations of these devices are also evaluated. Finally, the future prospect of the neuromorphic circuit based on phase-change technologies is envisioned.

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“…GeTe material has attracted extensive attention in recent years [11][12][13][14][15]. It has been considered as a strong contender for the next-generation memory technology as the material exhibits different physical, electrical, and optical properties when it is in amorphous and crystal phases [16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

et al. 2020

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GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A highperformance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 10 11 Jones at 850 nm light irradiation at room temperature was demonstrated.

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Overview of Probe-based Storage Technologies

Cited by 19 publications

References 113 publications

Sliding Speed-Dependent Tribochemical Wear of Oxide-Free Silicon

Sliding Speed-Dependent Tribochemical Wear of Oxide-Free Silicon

Recent Advances on Neuromorphic Systems Using Phase-Change Materials

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

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