Parasitic bipolar effects on soft errors to prevent simultaneous flips of redundant flip-flops

Zhang, Kuiyuan; Yamamoto, Ryōichi; Furuta, Jun; Kobayashi, Kazutoshi; Onodera, Hidetoshi

doi:10.1109/irps.2012.6241844

Cited by 6 publications

(1 citation statement)

References 10 publications

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“…The source region of target transistors is not connected to power or ground. For PMOS transistors, the floating source structure breaks the parasitic bipolar conduction of drain-well source [16]. This structure mitigates the parasitic bipolar amplification (PBA) effect and may significantly affect the ion-induced sensitive area.…”

Section: Test Chip Design and Experimental Setupmentioning

confidence: 99%

TAISAM: A Transistor Array-Based Test Method for Characterizing Heavy Ion-Induced Sensitive Areas in Semiconductor Materials

et al. 2022

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The heavy ion-induced sensitive area is an essential parameter for space application integrated circuits. Circuit Designers need it to evaluate and mitigate heavy ion-induced soft errors. However, it is hard to measure this parameter due to the lack of test structures and methods. In this paper, a test method called TAISAM was proposed to measure the heavy ion-induced sensitive area. TAISAM circuits were irradiated under the heavy ions. The measured sensitive areas are 1.75 μm2 and 1.00 μm2 with different LET values. TAISAM circuits are also used to investigate the layout structures that can affect the sensitive area. When the source region of the target transistor is floating, the heavy ion-induced sensitive area decreases by 28.5% for the target PMOS transistor while it increases by more than 28% for the target NMOS transistor. When the well contacts are added, the heavy ion-induced sensitive area decreases by more than 25% for the target PMOS transistor while it remains unchanged for the target NMOS transistor. Experimental results directly validate that the two structures significantly affect the heavy ion-induced sensitive area.

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Section: Test Chip Design and Experimental Setupmentioning

confidence: 99%