Parasitic Bipolar Effect of a Thin-Film Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistor at High Temperatures

Abstract

In this paper, we describe the parasitic bipolar effect of the fabricated thin-film silicon-on-insulator (SOI) power metal–oxide–semiconductor field-effect transistor (MOSFET) at high temperatures. This effect in the on-state was suppressed as temperature increased. This effect in the off-state was promoted as temperature and body contact pitch increased. The parasitic bipolar effect caused by the thermally generated current is enhanced by increasing temperature and decreasing channel length. This reduced breakdown voltage.

Hot carrier effect and positive bias temperature instability of a thin-film silicon-on-insulator power MOSFET at high temperature

“…5. On-resistance increases with increasing temperature 5,7,28) because electron mobility decreases with increasing temperature.…”

“…6. Threshold voltage decreases with increasing temperature 5,7,28) because of the increase in intrinsic carrier density.…”

“…Breakdown voltage increases with increasing temperature when temperature is less than 423 K, and decreases with increasing temperature when temperature is more than 423 K. The decrease in breakdown voltage with increasing temperature is caused by the parasitic bipolar effect. 5,7,28) The dependence of leakage current on temperature is shown in Fig. 8.…”

Hot carrier effect of a scaled thin-film silicon-on-insulator power metal oxide semiconductor field-effect transistor under constant drain electric field

“…The thin-film SOI power MOSFET was fabricated using the 0.5-µm-rule polycide gate process with local oxidation of silicon (LOCOS) isolation. 26) The main device characteristics are listed in Table II.…”

Impact of the silicon on diamond structure for high temperature switching applications

“…16) When the SOI power MOSFETs operate at high temperature, on-resistance and leakage current increase because of selfheating effect due to poor thermal conductivity of SiO 2 . [17][18][19][20][21][22][23][24] Silicon-on-diamond (SOD) substrate, which uses diamond film used as an insulator film, is attractive because the thermal conductivity of diamond film is much higher than that of SiO 2 . 25) The higher thermal conductivity diamond film reduces the temperature of active Si layer and this suppresses the increase in leakage current and on-resistance caused by self-heating effect.…”