In this study, we assessed a semiconductor (silicon or GaN)-on-diamond (SeOD) structure and compared it with a conventional silicon on insulator (SOI) structure, i.e., diamond, for power-supply-on-chip (power-SoC) applications by numerical simulations. The SeOD structure has thermal advantages over the conventional SOI structure without degrading electrical characteristics even using a thin diamond film (0.3 µm).
This paper evaluates Silicon-on-diamond (SOD) structure compared to the conventional SOI for high temperature switching applications.For high temperature applications (> 473 K), major loss is due to on-resistance and leakage current. The power MOSFETs fabricated on SOD substrate shows lower loss compared with that fabricated on the conventional SOI substrate.
In this paper, the electrostatic-discharge (ESD) protection capabilities of the protection devices fabricated on a silicon-on-diamond (SOD) structure and a conventional Si substrate are compared. The results showed that the ESD protection capability of the SOD substrate is higher than that of the silicon-on-insulator (SOI) substrate. We also evaluate the ESD protection device suitable for the SOD structure. In addition, we propose the three-dimensional (3D) stacking structure suitable for a power supply on a chip (power-SoC) and the best location for the implementation of the ESD protection device based on the results of device simulations.
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