Impact of the silicon on diamond structure for high temperature switching applications

Abstract

This paper evaluates Silicon-on-diamond (SOD) structure compared to the conventional SOI for high temperature switching applications.For high temperature applications (> 473 K), major loss is due to on-resistance and leakage current. The power MOSFETs fabricated on SOD substrate shows lower loss compared with that fabricated on the conventional SOI substrate.

Fabrication of silicon-on-diamond substrate with an ultrathin SiO2 bonding layer

“…To improve the heat dissipation performance of SOI devices, the poor thermal conductive material SiO 2 should be used as a buried layer and an interlayer dielectric should be changed to a high-thermal-conductivity material such as diamond. [23][24][25][26][27] Matsumoto and coworkers [28][29][30] proposed a silicon-on-diamond (SOD) substrate and predicted an operating temperature decrease of approximately 40 degrees Celsius by numerical calculation in which the buried layer and interlayer film were assumed to be nano-crystalline diamond (NCD) with a thermal conductivity of 20 W m −1 K −1 . 28) Duangchan et al 31) demonstrated the advantage of the heat dissipation of the NCD film coated on a Si thin film on a SOI substrate.…”

Impact of three-dimensional stacking silicon on diamond substrate for the electrostatic discharge protection device

“…We previously reported the advantages of using the SOD substrate in power-SoC and high-temperature switching applications based on the results of numerical simulations. [12][13][14][15][16][17][18] In addition, we also report a fabrication process based on a lowtemperature (<200 °C) wafer direct bonding process. 19) Recently, three-dimensional (3D) stacking power-SoC has attracted attention because it can a realize much higher density integration and a heterogeneous integration in various devices such as Si LSI and high-frequency and highefficiency GaN power devices.…”